Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy

A. Kawaharazuka; K. Onomitsu; J. Nishinaga; Y. Horikoshi

doi:10.1016/j.jcrysgro.2010.12.051

Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy

A. Kawaharazuka^*, K. Onomitsu, J. Nishinaga, Y. Horikoshi

^*Corresponding author for this work

Waseda Institute for Advanced Study

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We investigate the effect of excitons on the photo-absorption in the solar-cell with AlGaAs/GaAs superlattice active layer. Absorption spectrum measured at room temperature is analyzed by using numerical simulation. Experimentally obtained spectrum is well explained by the simulation taking the excitonic effect into account. The photo-absorption is enhanced by excitons especially near the absorption edge due to the discrete bound exciton states as well as unbound continuous sates. This result clearly indicates that the excitonic absorption is effective in the superlattice even at room temperature. Superlattice active layer enhances the absorption efficiency of solar-cells and very useful for device applications.

Original language	English
Pages (from-to)	504-507
Number of pages	4
Journal	Journal of Crystal Growth
Volume	323
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.12.051
Publication status	Published - 2011 May 15

Keywords

Molecular beam epitaxy
Semiconducting gallium arsenide
Solar cells
Superlattices

ASJC Scopus subject areas

Condensed Matter Physics
Materials Chemistry
Inorganic Chemistry

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10.1016/j.jcrysgro.2010.12.051

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title = "Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy",

abstract = "We investigate the effect of excitons on the photo-absorption in the solar-cell with AlGaAs/GaAs superlattice active layer. Absorption spectrum measured at room temperature is analyzed by using numerical simulation. Experimentally obtained spectrum is well explained by the simulation taking the excitonic effect into account. The photo-absorption is enhanced by excitons especially near the absorption edge due to the discrete bound exciton states as well as unbound continuous sates. This result clearly indicates that the excitonic absorption is effective in the superlattice even at room temperature. Superlattice active layer enhances the absorption efficiency of solar-cells and very useful for device applications.",

keywords = "Molecular beam epitaxy, Semiconducting gallium arsenide, Solar cells, Superlattices",

author = "A. Kawaharazuka and K. Onomitsu and J. Nishinaga and Y. Horikoshi",

year = "2011",

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day = "15",

doi = "10.1016/j.jcrysgro.2010.12.051",

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volume = "323",

pages = "504--507",

journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy

AU - Kawaharazuka, A.

AU - Onomitsu, K.

AU - Nishinaga, J.

AU - Horikoshi, Y.

PY - 2011/5/15

Y1 - 2011/5/15

N2 - We investigate the effect of excitons on the photo-absorption in the solar-cell with AlGaAs/GaAs superlattice active layer. Absorption spectrum measured at room temperature is analyzed by using numerical simulation. Experimentally obtained spectrum is well explained by the simulation taking the excitonic effect into account. The photo-absorption is enhanced by excitons especially near the absorption edge due to the discrete bound exciton states as well as unbound continuous sates. This result clearly indicates that the excitonic absorption is effective in the superlattice even at room temperature. Superlattice active layer enhances the absorption efficiency of solar-cells and very useful for device applications.

AB - We investigate the effect of excitons on the photo-absorption in the solar-cell with AlGaAs/GaAs superlattice active layer. Absorption spectrum measured at room temperature is analyzed by using numerical simulation. Experimentally obtained spectrum is well explained by the simulation taking the excitonic effect into account. The photo-absorption is enhanced by excitons especially near the absorption edge due to the discrete bound exciton states as well as unbound continuous sates. This result clearly indicates that the excitonic absorption is effective in the superlattice even at room temperature. Superlattice active layer enhances the absorption efficiency of solar-cells and very useful for device applications.

KW - Molecular beam epitaxy

KW - Semiconducting gallium arsenide

KW - Solar cells

KW - Superlattices

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DO - 10.1016/j.jcrysgro.2010.12.051

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VL - 323

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

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ER -

Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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