Effect of highly concentrated ozone on the etching properties of preoxide films on Si(100)

Ken Nakamura; Shingo Ichimura; Akira Kurokawa; Kunihiko Koike

doi:10.1143/jjap.41.l754

Effect of highly concentrated ozone on the etching properties of preoxide films on Si(100)

Ken Nakamura^*, Shingo Ichimura, Akira Kurokawa, Kunihiko Koike

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We have investigated the effect of ozone on already existing silicon oxide films as preoxide on Si(100). The use of highly concentrated ozone (25 vol%) at atmospheric pressure has made it possible to modify a native oxide film on Si(100) at 350°C, resulting in upgraded film quality and reduced thickness of structural transition layers. This was shown by the change of an etching rate by hydrofluoric acid (HF) solution of the oxide film exposed to ozone. However, the exposure of ozone to Si(100) at 350°C with an already existing thermally grown oxide film caused no change in the distribution of transition layers in the oxide. This contrast suggests the possibility of upgrading the properties of a preoxide film without structural transition layers at the appropriate substrate temperature.

Original language	English
Pages (from-to)	L754-L757
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	41
Issue number	7 A
DOIs	https://doi.org/10.1143/jjap.41.l754
Publication status	Published - 2002 Jul 1
Externally published	Yes

Keywords

Etching
Interface
Oxidation
Ozone
Silicon
Silicon oxide
Thin film
XPS

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.41.l754

Cite this

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title = "Effect of highly concentrated ozone on the etching properties of preoxide films on Si(100)",

abstract = "We have investigated the effect of ozone on already existing silicon oxide films as preoxide on Si(100). The use of highly concentrated ozone (25 vol%) at atmospheric pressure has made it possible to modify a native oxide film on Si(100) at 350°C, resulting in upgraded film quality and reduced thickness of structural transition layers. This was shown by the change of an etching rate by hydrofluoric acid (HF) solution of the oxide film exposed to ozone. However, the exposure of ozone to Si(100) at 350°C with an already existing thermally grown oxide film caused no change in the distribution of transition layers in the oxide. This contrast suggests the possibility of upgrading the properties of a preoxide film without structural transition layers at the appropriate substrate temperature.",

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AU - Nakamura, Ken

AU - Ichimura, Shingo

AU - Kurokawa, Akira

AU - Koike, Kunihiko

PY - 2002/7/1

Y1 - 2002/7/1

N2 - We have investigated the effect of ozone on already existing silicon oxide films as preoxide on Si(100). The use of highly concentrated ozone (25 vol%) at atmospheric pressure has made it possible to modify a native oxide film on Si(100) at 350°C, resulting in upgraded film quality and reduced thickness of structural transition layers. This was shown by the change of an etching rate by hydrofluoric acid (HF) solution of the oxide film exposed to ozone. However, the exposure of ozone to Si(100) at 350°C with an already existing thermally grown oxide film caused no change in the distribution of transition layers in the oxide. This contrast suggests the possibility of upgrading the properties of a preoxide film without structural transition layers at the appropriate substrate temperature.

AB - We have investigated the effect of ozone on already existing silicon oxide films as preoxide on Si(100). The use of highly concentrated ozone (25 vol%) at atmospheric pressure has made it possible to modify a native oxide film on Si(100) at 350°C, resulting in upgraded film quality and reduced thickness of structural transition layers. This was shown by the change of an etching rate by hydrofluoric acid (HF) solution of the oxide film exposed to ozone. However, the exposure of ozone to Si(100) at 350°C with an already existing thermally grown oxide film caused no change in the distribution of transition layers in the oxide. This contrast suggests the possibility of upgrading the properties of a preoxide film without structural transition layers at the appropriate substrate temperature.

KW - Etching

KW - Interface

KW - Oxidation

KW - Ozone

KW - Silicon

KW - Silicon oxide

KW - Thin film

KW - XPS

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Effect of highly concentrated ozone on the etching properties of preoxide films on Si(100)

Abstract

Keywords

ASJC Scopus subject areas

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