Effect of hydrogen and cluster morphology on the electronic behavior of Ni-Nb-Zr-H glassy alloys with subnanometer-sized icosahedral Zr 5Ni5Nb5 clusters

Mikio Fukuhara; Hajime Yoshida; Hiroshi Kawarada

doi:10.1140/epjd/e2012-30484-6

Effect of hydrogen and cluster morphology on the electronic behavior of Ni-Nb-Zr-H glassy alloys with subnanometer-sized icosahedral Zr ₅Ni₅Nb₅ clusters

Mikio Fukuhara^*, Hajime Yoshida, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The effects of hydrogen content and cluster morphology on the electronic transport behavior of (Ni_0.36Nb_0.24Zr_0.40) _100-xH_x (0 < × < 20) glassy alloys containing distorted nanostructural icosahedral Zr₅Nb₅Ni₃ clusters have been studied. When the hydrogen content is less than 7 at%, the hydrogen atom is localized between Ni atoms of neighboring distorted icosahedral Zr₅Ni₅Nb₃ clusters. The I_d-V _g-B characteristics of the (Ni_0.36Nb_0.4Zr _0.40)₉₀H₁₀ glassy alloy field-effect transistor (GAFET) showed room-temperature three-dimensional Coulomb oscillation and the Fano effect, which arises from interference of electrons traveling through two different cluster configurations, namely a localized discrete state inside the quantum dot and a continuum in the arm.

Original language	English
Article number	40
Journal	European Physical Journal D
Volume	67
Issue number	2
DOIs	https://doi.org/10.1140/epjd/e2012-30484-6
Publication status	Published - 2013 Feb

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

Access to Document

10.1140/epjd/e2012-30484-6

Cite this

@article{0a3f70f889254ed88fdbbcbe250fa770,

title = "Effect of hydrogen and cluster morphology on the electronic behavior of Ni-Nb-Zr-H glassy alloys with subnanometer-sized icosahedral Zr 5Ni5Nb5 clusters",

abstract = "The effects of hydrogen content and cluster morphology on the electronic transport behavior of (Ni0.36Nb0.24Zr0.40) 100-xHx (0 < × < 20) glassy alloys containing distorted nanostructural icosahedral Zr5Nb5Ni3 clusters have been studied. When the hydrogen content is less than 7 at%, the hydrogen atom is localized between Ni atoms of neighboring distorted icosahedral Zr5Ni5Nb3 clusters. The Id-V g-B characteristics of the (Ni0.36Nb0.4Zr 0.40)90H10 glassy alloy field-effect transistor (GAFET) showed room-temperature three-dimensional Coulomb oscillation and the Fano effect, which arises from interference of electrons traveling through two different cluster configurations, namely a localized discrete state inside the quantum dot and a continuum in the arm.",

author = "Mikio Fukuhara and Hajime Yoshida and Hiroshi Kawarada",

year = "2013",

month = feb,

doi = "10.1140/epjd/e2012-30484-6",

language = "English",

volume = "67",

journal = "European Physical Journal D",

issn = "1434-6060",

publisher = "Springer New York",

number = "2",

}

TY - JOUR

T1 - Effect of hydrogen and cluster morphology on the electronic behavior of Ni-Nb-Zr-H glassy alloys with subnanometer-sized icosahedral Zr 5Ni5Nb5 clusters

AU - Fukuhara, Mikio

AU - Yoshida, Hajime

AU - Kawarada, Hiroshi

PY - 2013/2

Y1 - 2013/2

N2 - The effects of hydrogen content and cluster morphology on the electronic transport behavior of (Ni0.36Nb0.24Zr0.40) 100-xHx (0 < × < 20) glassy alloys containing distorted nanostructural icosahedral Zr5Nb5Ni3 clusters have been studied. When the hydrogen content is less than 7 at%, the hydrogen atom is localized between Ni atoms of neighboring distorted icosahedral Zr5Ni5Nb3 clusters. The Id-V g-B characteristics of the (Ni0.36Nb0.4Zr 0.40)90H10 glassy alloy field-effect transistor (GAFET) showed room-temperature three-dimensional Coulomb oscillation and the Fano effect, which arises from interference of electrons traveling through two different cluster configurations, namely a localized discrete state inside the quantum dot and a continuum in the arm.

AB - The effects of hydrogen content and cluster morphology on the electronic transport behavior of (Ni0.36Nb0.24Zr0.40) 100-xHx (0 < × < 20) glassy alloys containing distorted nanostructural icosahedral Zr5Nb5Ni3 clusters have been studied. When the hydrogen content is less than 7 at%, the hydrogen atom is localized between Ni atoms of neighboring distorted icosahedral Zr5Ni5Nb3 clusters. The Id-V g-B characteristics of the (Ni0.36Nb0.4Zr 0.40)90H10 glassy alloy field-effect transistor (GAFET) showed room-temperature three-dimensional Coulomb oscillation and the Fano effect, which arises from interference of electrons traveling through two different cluster configurations, namely a localized discrete state inside the quantum dot and a continuum in the arm.

UR - http://www.scopus.com/inward/record.url?scp=84876242929&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84876242929&partnerID=8YFLogxK

U2 - 10.1140/epjd/e2012-30484-6

DO - 10.1140/epjd/e2012-30484-6

M3 - Article

AN - SCOPUS:84876242929

SN - 1434-6060

VL - 67

JO - European Physical Journal D

JF - European Physical Journal D

IS - 2

M1 - 40

ER -

Effect of hydrogen and cluster morphology on the electronic behavior of Ni-Nb-Zr-H glassy alloys with subnanometer-sized icosahedral Zr ₅Ni₅Nb₅ clusters

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this