Effect of interfacial interactions on the initial growth of Cu on clean SiO2 and 3-mercaptopropyltrimethoxysilane-modified SiO2 substrates

Minghui Hu; Suguru Noda; Yoshiko Tsuji; Tatsuya Okubo; Yukio Yamaguchi; Hiroshi Komiyama

doi:10.1116/1.1458941

Effect of interfacial interactions on the initial growth of Cu on clean SiO₂ and 3-mercaptopropyltrimethoxysilane-modified SiO₂ substrates

Minghui Hu^*, Suguru Noda, Yoshiko Tsuji, Tatsuya Okubo, Yukio Yamaguchi, Hiroshi Komiyama

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

The effect of interfacial interactions on the initial growth of Cu on clean SiO₂ and MPTMS-modified SiO₂ substrates by sputter deposition was studied using TEM, EDS, and XPS. The number density increased while the interparticle distance decreased, indicating that Cu has a lower mobility on MPTMS islands on MPTMS-modified SiO₂ substrates than on clean SiO₂ substrates. This difference was attributed to the enhanced interfacial interactions between Cu and S on MPTMS islands on MPTMS-modified SiO₂ substrates via the formation of Cu-S bonds, compared with the relatively weak interfacial interactions between Cu and Si or O on clean SiO₂ substrates.

Original language	English
Pages (from-to)	589-596
Number of pages	8
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.1458941
Publication status	Published - 2002 May
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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Effect of interfacial interactions on the initial growth of Cu on clean SiO₂ and 3-mercaptopropyltrimethoxysilane-modified SiO₂ substrates. / Hu, Minghui; Noda, Suguru; Tsuji, Yoshiko et al.
In: Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films, Vol. 20, No. 3, 05.2002, p. 589-596.

Research output: Contribution to journal › Article › peer-review

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AU - Yamaguchi, Yukio

AU - Komiyama, Hiroshi

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AB - The effect of interfacial interactions on the initial growth of Cu on clean SiO2 and MPTMS-modified SiO2 substrates by sputter deposition was studied using TEM, EDS, and XPS. The number density increased while the interparticle distance decreased, indicating that Cu has a lower mobility on MPTMS islands on MPTMS-modified SiO2 substrates than on clean SiO2 substrates. This difference was attributed to the enhanced interfacial interactions between Cu and S on MPTMS islands on MPTMS-modified SiO2 substrates via the formation of Cu-S bonds, compared with the relatively weak interfacial interactions between Cu and Si or O on clean SiO2 substrates.

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Effect of interfacial interactions on the initial growth of Cu on clean SiO₂ and 3-mercaptopropyltrimethoxysilane-modified SiO₂ substrates

Abstract

ASJC Scopus subject areas

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