Effect of iodide ions on the hydrogen-terminated and partially oxygen-terminated diamond surface

Hirofumi Kanazawa; Kwang Soup Song; Toshikatsu Sakai; Yusuke Nakamura; Hitoshi Umezawa; Minoru Tachiki; Hiroshi Kawarada

doi:10.1016/S0925-9635(03)00035-9

Effect of iodide ions on the hydrogen-terminated and partially oxygen-terminated diamond surface

Hirofumi Kanazawa^*, Kwang Soup Song, Toshikatsu Sakai, Yusuke Nakamura, Hitoshi Umezawa, Minoru Tachiki, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

The effect of I^- ions on the threshold voltages of the electrolyte-solution-gate diamond field-effect transistors (SGFETs) in KI solution is investigated. The threshold voltages of hydrogen-terminated (H-terminated) diamond SGFETs shift in the KI concentration range of 10^-6-10^-1 M in aqueous solutions. The sensitivity of the H-terminated diamond surface to I^- ions is higher than that to Cl^- or Br^- ions. However, the sensitivity to I^- ions of the partially oxygen-terminated (O-terminated) diamond surface drastically decreases with ozone treatment. The mechanisms of these phenomena can be explained by the surface charge and the adsorbability of I^- ions on the H-terminated and O-terminated diamond surfaces.

Original language	English
Pages (from-to)	618-622
Number of pages	5
Journal	Diamond and Related Materials
Volume	12
Issue number	3-7
DOIs	https://doi.org/10.1016/S0925-9635(03)00035-9
Publication status	Published - 2003 Mar

Keywords

Hydrogen-terminated diamond
Iodide ions
Ion sensitive FET
Oxygen-terminated diamond

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/S0925-9635(03)00035-9

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@article{b81f25fd865841b6bd981b6e1fb98a23,

title = "Effect of iodide ions on the hydrogen-terminated and partially oxygen-terminated diamond surface",

abstract = "The effect of I- ions on the threshold voltages of the electrolyte-solution-gate diamond field-effect transistors (SGFETs) in KI solution is investigated. The threshold voltages of hydrogen-terminated (H-terminated) diamond SGFETs shift in the KI concentration range of 10-6-10-1 M in aqueous solutions. The sensitivity of the H-terminated diamond surface to I- ions is higher than that to Cl- or Br- ions. However, the sensitivity to I- ions of the partially oxygen-terminated (O-terminated) diamond surface drastically decreases with ozone treatment. The mechanisms of these phenomena can be explained by the surface charge and the adsorbability of I- ions on the H-terminated and O-terminated diamond surfaces.",

keywords = "Hydrogen-terminated diamond, Iodide ions, Ion sensitive FET, Oxygen-terminated diamond",

author = "Hirofumi Kanazawa and Song, {Kwang Soup} and Toshikatsu Sakai and Yusuke Nakamura and Hitoshi Umezawa and Minoru Tachiki and Hiroshi Kawarada",

note = "Funding Information: This work is supported in part by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science and Technology. This work is also supported in part by the Advanced Research Institute for Science and Engineering, Waseda University.",

year = "2003",

month = mar,

doi = "10.1016/S0925-9635(03)00035-9",

language = "English",

volume = "12",

pages = "618--622",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "3-7",

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TY - JOUR

T1 - Effect of iodide ions on the hydrogen-terminated and partially oxygen-terminated diamond surface

AU - Kanazawa, Hirofumi

AU - Song, Kwang Soup

AU - Sakai, Toshikatsu

AU - Nakamura, Yusuke

AU - Umezawa, Hitoshi

AU - Tachiki, Minoru

AU - Kawarada, Hiroshi

N1 - Funding Information: This work is supported in part by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science and Technology. This work is also supported in part by the Advanced Research Institute for Science and Engineering, Waseda University.

PY - 2003/3

Y1 - 2003/3

N2 - The effect of I- ions on the threshold voltages of the electrolyte-solution-gate diamond field-effect transistors (SGFETs) in KI solution is investigated. The threshold voltages of hydrogen-terminated (H-terminated) diamond SGFETs shift in the KI concentration range of 10-6-10-1 M in aqueous solutions. The sensitivity of the H-terminated diamond surface to I- ions is higher than that to Cl- or Br- ions. However, the sensitivity to I- ions of the partially oxygen-terminated (O-terminated) diamond surface drastically decreases with ozone treatment. The mechanisms of these phenomena can be explained by the surface charge and the adsorbability of I- ions on the H-terminated and O-terminated diamond surfaces.

AB - The effect of I- ions on the threshold voltages of the electrolyte-solution-gate diamond field-effect transistors (SGFETs) in KI solution is investigated. The threshold voltages of hydrogen-terminated (H-terminated) diamond SGFETs shift in the KI concentration range of 10-6-10-1 M in aqueous solutions. The sensitivity of the H-terminated diamond surface to I- ions is higher than that to Cl- or Br- ions. However, the sensitivity to I- ions of the partially oxygen-terminated (O-terminated) diamond surface drastically decreases with ozone treatment. The mechanisms of these phenomena can be explained by the surface charge and the adsorbability of I- ions on the H-terminated and O-terminated diamond surfaces.

KW - Hydrogen-terminated diamond

KW - Iodide ions

KW - Ion sensitive FET

KW - Oxygen-terminated diamond

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U2 - 10.1016/S0925-9635(03)00035-9

DO - 10.1016/S0925-9635(03)00035-9

M3 - Article

AN - SCOPUS:0038576361

SN - 0925-9635

VL - 12

SP - 618

EP - 622

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 3-7

ER -

Effect of iodide ions on the hydrogen-terminated and partially oxygen-terminated diamond surface

Abstract

Keywords

ASJC Scopus subject areas

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