TY - JOUR
T1 - Effect of nitrogen addition on the structural, electrical, and optical properties of In-Sn-Zn oxide thin films
AU - Jia, Junjun
AU - Torigoshi, Yoshifumi
AU - Suko, Ayaka
AU - Nakamura, Shin ichi
AU - Kawashima, Emi
AU - Utsuno, Futoshi
AU - Shigesato, Yuzo
PY - 2017/2/28
Y1 - 2017/2/28
N2 - Indium-tin-zinc oxide (ITZO) films were deposited at various nitrogen flow ratios using magnetron sputtering. At a nitrogen flow ratio of 40%, the structure of ITZO film changed from amorphous, with a short-range-ordered In 2 O 3 phase, to a c-axis oriented InN polycrystalline phase, where InN starts to nucleate from an amorphous In 2 O 3 matrix. Whereas, nitrogen addition had no obvious effect on the structure of indium-gallium-zinc oxide (IGZO) films even at a nitrogen flow ratio of 100%. Nitrogen addition also suppressed the formation of oxygen-related vacancies in ITZO films when the nitrogen flow ratio was less than 20%, and higher nitrogen addition led to an increase in carrier density. Moreover, a red-shift in the optical band edge was observed as the nitrogen flow ratio increased, which could be attributed to the generation of InN crystallites. We anticipate that the present findings demonstrating nitrogen-addition induced structural changes can help to understand the environment-dependent instability in amorphous IGZO or ITZO based thin-film transistors (TFTs).
AB - Indium-tin-zinc oxide (ITZO) films were deposited at various nitrogen flow ratios using magnetron sputtering. At a nitrogen flow ratio of 40%, the structure of ITZO film changed from amorphous, with a short-range-ordered In 2 O 3 phase, to a c-axis oriented InN polycrystalline phase, where InN starts to nucleate from an amorphous In 2 O 3 matrix. Whereas, nitrogen addition had no obvious effect on the structure of indium-gallium-zinc oxide (IGZO) films even at a nitrogen flow ratio of 100%. Nitrogen addition also suppressed the formation of oxygen-related vacancies in ITZO films when the nitrogen flow ratio was less than 20%, and higher nitrogen addition led to an increase in carrier density. Moreover, a red-shift in the optical band edge was observed as the nitrogen flow ratio increased, which could be attributed to the generation of InN crystallites. We anticipate that the present findings demonstrating nitrogen-addition induced structural changes can help to understand the environment-dependent instability in amorphous IGZO or ITZO based thin-film transistors (TFTs).
KW - Amorphous oxide semiconductor
KW - Indium-Tin-Zinc oxide (ITZO) film
KW - Negative-bias-illumination stress-induced instability
KW - Nitrogen addition
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U2 - 10.1016/j.apsusc.2016.11.058
DO - 10.1016/j.apsusc.2016.11.058
M3 - Article
AN - SCOPUS:85006707303
SN - 0169-4332
VL - 396
SP - 897
EP - 901
JO - Applied Surface Science
JF - Applied Surface Science
ER -