TY - JOUR
T1 - Effect of oxidized silicon surface on chemical deposition of nickel on n-type silicon wafer
AU - Takano, Nao
AU - Hosoda, Naohiro
AU - Yamada, Taro
AU - Osaka, Tetsuya
N1 - Funding Information:
This work was financially supported by the Research for the Future Project ‘Wafer-Scale Formation Process of Quantum Dots’, the Japan Society for the Promotion of Science.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 1999/6/1
Y1 - 1999/6/1
N2 - The effect of oxidation of silicon surface on chemical deposition of nickel was investigated in aqueous basic baths containing Ni2+. On H-terminated Si(100), Ni was deposited obviously but partially. On oxidized Si(100), Ni was deposited on the whole surface with a higher rate than on H-Si (100). The deposits were examined by scanning electron microscopy (SEM) and Auger electron spectroscopy (AES). Selective nickel deposition was performed on oxidized Si(100) patterned with a layer of plasma-CVD SiO2. Ni dots with diameters about 1 μm were formed by dipping the patterned Si(100) wafers first into a Ni bath containing no reducing agent for nuclei formation, and then into a Ni bath with reducing agent for growing particles.
AB - The effect of oxidation of silicon surface on chemical deposition of nickel was investigated in aqueous basic baths containing Ni2+. On H-terminated Si(100), Ni was deposited obviously but partially. On oxidized Si(100), Ni was deposited on the whole surface with a higher rate than on H-Si (100). The deposits were examined by scanning electron microscopy (SEM) and Auger electron spectroscopy (AES). Selective nickel deposition was performed on oxidized Si(100) patterned with a layer of plasma-CVD SiO2. Ni dots with diameters about 1 μm were formed by dipping the patterned Si(100) wafers first into a Ni bath containing no reducing agent for nuclei formation, and then into a Ni bath with reducing agent for growing particles.
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U2 - 10.1016/S0013-4686(99)00079-1
DO - 10.1016/S0013-4686(99)00079-1
M3 - Conference article
AN - SCOPUS:0032691679
SN - 0013-4686
VL - 44
SP - 3743
EP - 3749
JO - Electrochimica Acta
JF - Electrochimica Acta
IS - 21
T2 - Proceedings of the 1999 2nd International Symposium on Electrochemical Microsystems Technologies - Electrochemical Applications of Microtechnology
Y2 - 9 September 1999 through 11 September 1999
ER -