Abstract
There is slight lack of stoichiometry in pure silica glass, which varies according to the synthesis process. The lack of stoichiometry leads to defect formations: The 245 nm absorption band and drawing-induced E’ centers are formed in oxygen-deficient silica, but peroxy radicals and drawing-induced 2 eV band are formed in oxygen-rich silica. The 245 nm band seems to be caused by the Si-Si bonding.
Original language | English |
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Pages (from-to) | L554-L557 |
Journal | Japanese journal of applied physics |
Volume | 26 |
Issue number | 5A |
DOIs | |
Publication status | Published - 1987 May |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)