Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low-pressure chemical vapor deposition

Hiromitsu Kato; Kwang Soo Seol; Makoto Fujimaki; Takehiko Toyoda; Yoshimichi Ohki; Makoto Takiyama

doi:10.1143/jjap.38.6791

Effect of ozone annealing on the charge trapping property of Ta₂O₅-Si₃N₄-p-Si capacitor grown by low-pressure chemical vapor deposition

Hiromitsu Kato^*, Kwang Soo Seol, Makoto Fujimaki, Takehiko Toyoda, Yoshimichi Ohki, Makoto Takiyama

^*Corresponding author for this work

Kagami Memorial Research Institute for Materials Science and Technology

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The effect of ozone annealing on the charge trapping property of Ta₂O₅/Si₃N₄/p-Si capacitors was examined by measuring high-frequency capacitance-voltage and thermally stimulated current characteristics. The results suggest that two types of electron traps exist in the Ta₂O₅ layer and that the ozone annealing efficiently eliminates them.

Original language	English
Pages (from-to)	6791-6796
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	12 A
DOIs	https://doi.org/10.1143/jjap.38.6791
Publication status	Published - 1999 Dec 1

Keywords

Charge trapping property
Hysteresis loop
Ozone annealing
Thermally stimulated current

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.38.6791

Cite this

Kato, H., Seol, K. S., Fujimaki, M., Toyoda, T., Ohki, Y., & Takiyama, M. (1999). Effect of ozone annealing on the charge trapping property of Ta₂O₅-Si₃N₄-p-Si capacitor grown by low-pressure chemical vapor deposition. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 38(12 A), 6791-6796. https://doi.org/10.1143/jjap.38.6791

Effect of ozone annealing on the charge trapping property of Ta₂O₅-Si₃N₄-p-Si capacitor grown by low-pressure chemical vapor deposition. / Kato, Hiromitsu; Seol, Kwang Soo; Fujimaki, Makoto et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 12 A, 01.12.1999, p. 6791-6796.

Research output: Contribution to journal › Article › peer-review

Kato, H, Seol, KS, Fujimaki, M, Toyoda, T, Ohki, Y & Takiyama, M 1999, 'Effect of ozone annealing on the charge trapping property of Ta₂O₅-Si₃N₄-p-Si capacitor grown by low-pressure chemical vapor deposition', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 38, no. 12 A, pp. 6791-6796. https://doi.org/10.1143/jjap.38.6791

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