Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low pressure chemical vapor deposition

H. Kato; K. S. Seol; T. Toyoda; Y. Ohki

Effect of ozone annealing on the charge trapping property of Ta₂O₅-Si₃N₄-p-Si capacitor grown by low pressure chemical vapor deposition

H. Kato^*, K. S. Seol, T. Toyoda, Y. Ohki

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

The effects of ozone annealing on the charge trapping property of TaO films grown on Si₃N₄ barrier layers by low pressure CVD are investigated. The ozone annealing eliminates electron traps existing throughout the Ta₂O₅ films but generates hole traps. This is maybe due to structural or stoichiometric change induced by the ozone annealing.

Original language	English
Pages	131-134
Number of pages	4
Publication status	Published - 1998 Dec 1
Event	Proceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn Duration: 1998 Sept 27 → 1998 Sept 30

Other

Other	Proceedings of the 1998 International Symposium on Electrical Insulating Materials
City	Toyohashi, Jpn
Period	98/9/27 → 98/9/30

ASJC Scopus subject areas

Engineering(all)
Materials Science(all)

Cite this

Effect of ozone annealing on the charge trapping property of Ta₂O₅-Si₃N₄-p-Si capacitor grown by low pressure chemical vapor deposition. / Kato, H.; Seol, K. S.; Toyoda, T. et al.
1998. 131-134 Paper presented at Proceedings of the 1998 International Symposium on Electrical Insulating Materials, Toyohashi, Jpn.

Research output: Contribution to conference › Paper › peer-review

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title = "Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low pressure chemical vapor deposition",

abstract = "The effects of ozone annealing on the charge trapping property of TaO films grown on Si3N4 barrier layers by low pressure CVD are investigated. The ozone annealing eliminates electron traps existing throughout the Ta2O5 films but generates hole traps. This is maybe due to structural or stoichiometric change induced by the ozone annealing.",

author = "H. Kato and Seol, {K. S.} and T. Toyoda and Y. Ohki",

year = "1998",

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note = "Proceedings of the 1998 International Symposium on Electrical Insulating Materials ; Conference date: 27-09-1998 Through 30-09-1998",

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T1 - Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low pressure chemical vapor deposition

AU - Kato, H.

AU - Seol, K. S.

AU - Toyoda, T.

AU - Ohki, Y.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The effects of ozone annealing on the charge trapping property of TaO films grown on Si3N4 barrier layers by low pressure CVD are investigated. The ozone annealing eliminates electron traps existing throughout the Ta2O5 films but generates hole traps. This is maybe due to structural or stoichiometric change induced by the ozone annealing.

AB - The effects of ozone annealing on the charge trapping property of TaO films grown on Si3N4 barrier layers by low pressure CVD are investigated. The ozone annealing eliminates electron traps existing throughout the Ta2O5 films but generates hole traps. This is maybe due to structural or stoichiometric change induced by the ozone annealing.

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M3 - Paper

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EP - 134

T2 - Proceedings of the 1998 International Symposium on Electrical Insulating Materials

Y2 - 27 September 1998 through 30 September 1998

ER -

Effect of ozone annealing on the charge trapping property of Ta₂O₅-Si₃N₄-p-Si capacitor grown by low pressure chemical vapor deposition

Abstract

Other

ASJC Scopus subject areas

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