Effect of postannealing on the performance of pentacene single-crystal ambipolar transistors

Taishi Takenobu; Kazuhiro Watanabe; Yohei Yomogida; Hidekazu Shimotani; Yoshihiro Iwasa

doi:10.1063/1.2969772

Effect of postannealing on the performance of pentacene single-crystal ambipolar transistors

Taishi Takenobu^*, Kazuhiro Watanabe, Yohei Yomogida, Hidekazu Shimotani, Yoshihiro Iwasa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

Ambipolar organic field-effect transistors (OFETs) with comparable hole and electron mobilities were fabricated using pentacene single crystals. Ambipolar single-crystal transistors enable us to determine the intrinsic effect of postannealing on the performance of OFETs, which remains controversial. The results confirm that postannealing predominantly causes hole dedoping due to oxygen desorption.

Original language	English
Article number	073301
Journal	Applied Physics Letters
Volume	93
Issue number	7
DOIs	https://doi.org/10.1063/1.2969772
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2969772

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title = "Effect of postannealing on the performance of pentacene single-crystal ambipolar transistors",

abstract = "Ambipolar organic field-effect transistors (OFETs) with comparable hole and electron mobilities were fabricated using pentacene single crystals. Ambipolar single-crystal transistors enable us to determine the intrinsic effect of postannealing on the performance of OFETs, which remains controversial. The results confirm that postannealing predominantly causes hole dedoping due to oxygen desorption.",

author = "Taishi Takenobu and Kazuhiro Watanabe and Yohei Yomogida and Hidekazu Shimotani and Yoshihiro Iwasa",

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AU - Shimotani, Hidekazu

AU - Iwasa, Yoshihiro

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AB - Ambipolar organic field-effect transistors (OFETs) with comparable hole and electron mobilities were fabricated using pentacene single crystals. Ambipolar single-crystal transistors enable us to determine the intrinsic effect of postannealing on the performance of OFETs, which remains controversial. The results confirm that postannealing predominantly causes hole dedoping due to oxygen desorption.

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Effect of postannealing on the performance of pentacene single-crystal ambipolar transistors

Abstract

ASJC Scopus subject areas

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