Effect of strain relaxation layers in high indium content metamorphic InGaAs/InAlAs modulation doped heterostructures

S. Gozu; T. Kita; H. Sato; S. Yamada

doi:10.1109/ICIPRM.2001.929017

Effect of strain relaxation layers in high indium content metamorphic InGaAs/InAlAs modulation doped heterostructures

S. Gozu, T. Kita, H. Sato, S. Yamada

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We have investigated effect of residual strain appeared in the transport and optical properties of high indium content metamorphic In_0.75Ga_0.25As/In_0.75Al_0.25As modulation doped heterostructures grown via (inverse step: IS-) step graded buffer (SGB). The effect of residual strain was controlled by IS structure and a drastic decrease of residual strain (about one third) was observed. We have also observed an improved low temperature (77K) electron mobility, when the IS buffer was used. We found that the residual strain is one of the important interface condition which determines the low temperature (77K) electron mobility.

Original language	English
Pages (from-to)	55-58
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
DOIs	https://doi.org/10.1109/ICIPRM.2001.929017
Publication status	Published - 2001
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/ICIPRM.2001.929017

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title = "Effect of strain relaxation layers in high indium content metamorphic InGaAs/InAlAs modulation doped heterostructures",

abstract = "We have investigated effect of residual strain appeared in the transport and optical properties of high indium content metamorphic In0.75Ga0.25As/In0.75Al0.25As modulation doped heterostructures grown via (inverse step: IS-) step graded buffer (SGB). The effect of residual strain was controlled by IS structure and a drastic decrease of residual strain (about one third) was observed. We have also observed an improved low temperature (77K) electron mobility, when the IS buffer was used. We found that the residual strain is one of the important interface condition which determines the low temperature (77K) electron mobility.",

author = "S. Gozu and T. Kita and H. Sato and S. Yamada",

year = "2001",

doi = "10.1109/ICIPRM.2001.929017",

language = "English",

pages = "55--58",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

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T1 - Effect of strain relaxation layers in high indium content metamorphic InGaAs/InAlAs modulation doped heterostructures

AU - Gozu, S.

AU - Kita, T.

AU - Sato, H.

AU - Yamada, S.

PY - 2001

Y1 - 2001

N2 - We have investigated effect of residual strain appeared in the transport and optical properties of high indium content metamorphic In0.75Ga0.25As/In0.75Al0.25As modulation doped heterostructures grown via (inverse step: IS-) step graded buffer (SGB). The effect of residual strain was controlled by IS structure and a drastic decrease of residual strain (about one third) was observed. We have also observed an improved low temperature (77K) electron mobility, when the IS buffer was used. We found that the residual strain is one of the important interface condition which determines the low temperature (77K) electron mobility.

AB - We have investigated effect of residual strain appeared in the transport and optical properties of high indium content metamorphic In0.75Ga0.25As/In0.75Al0.25As modulation doped heterostructures grown via (inverse step: IS-) step graded buffer (SGB). The effect of residual strain was controlled by IS structure and a drastic decrease of residual strain (about one third) was observed. We have also observed an improved low temperature (77K) electron mobility, when the IS buffer was used. We found that the residual strain is one of the important interface condition which determines the low temperature (77K) electron mobility.

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JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

ER -

Effect of strain relaxation layers in high indium content metamorphic InGaAs/InAlAs modulation doped heterostructures

Abstract

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