TY - GEN
T1 - Effect of Surface Charge Model in the Characterization of Two-dimensional Hydrogenated Nanocrystalline-diamond Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with Device Simulation
AU - Alhasani, Reem
AU - Yabe, Taichi
AU - Iyama, Yutaro
AU - Alhasani, Mohammed
AU - Nguyen, Quang N.
AU - Kawarada, Hiroshi
N1 - Funding Information:
This work was supported by the Institute of Nanoscience and Nanotechnology, Waseda University, Japan. Quang N. Nguyen’s work was funded by Waseda University Grant for Special Research Projects grant number 2019C-174.
Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - Diamond is a valuable material with unique properties of nanocrystalline and is widely used in the fabrication of nano-electronic devices to develop new and promising power device applications. In general, the hydrogenated-(C-H) nano-diamond Metal Oxide Semiconductor Field Effect Transistor (MOSFET) depicts the normally-on status (depletion mode). In this paper, we investigate the interface charge effect on C-H diamond to confirm the normally-on operation, then show the characterization of surface charge effect on device operations, including normally-off with a controlled gate voltage and the nature charge of the power device. To study the corresponding effects, we simulate the two-dimensional (2D) C-H nano-diamond MOSFET under several surface charge models. These negatively charged sites or acceptors are scattering centers for carrier (holes) transport near the C-H surface. When FET operation can be realized without negatively charged sites, channel mobility is not limited by these sites and is enhanced by a factor of 3-4. The results confirm that the two-dimensional hole gas (2DHG) close to the surface indicates a p-type channel due to the dipole effect between hydrogenated diamond and the negative charge of Al2O3. The normally-off operation is achieved to realize a safety point for the power device. The evaluation results also show that the threshold voltage shifts to a negative value in a positive charge model, given that in principle, this state is not feasible without an oxidation layer or doping.
AB - Diamond is a valuable material with unique properties of nanocrystalline and is widely used in the fabrication of nano-electronic devices to develop new and promising power device applications. In general, the hydrogenated-(C-H) nano-diamond Metal Oxide Semiconductor Field Effect Transistor (MOSFET) depicts the normally-on status (depletion mode). In this paper, we investigate the interface charge effect on C-H diamond to confirm the normally-on operation, then show the characterization of surface charge effect on device operations, including normally-off with a controlled gate voltage and the nature charge of the power device. To study the corresponding effects, we simulate the two-dimensional (2D) C-H nano-diamond MOSFET under several surface charge models. These negatively charged sites or acceptors are scattering centers for carrier (holes) transport near the C-H surface. When FET operation can be realized without negatively charged sites, channel mobility is not limited by these sites and is enhanced by a factor of 3-4. The results confirm that the two-dimensional hole gas (2DHG) close to the surface indicates a p-type channel due to the dipole effect between hydrogenated diamond and the negative charge of Al2O3. The normally-off operation is achieved to realize a safety point for the power device. The evaluation results also show that the threshold voltage shifts to a negative value in a positive charge model, given that in principle, this state is not feasible without an oxidation layer or doping.
KW - Nanodiamond
KW - diamond MOSFET
KW - normally on
KW - surface charge
KW - two-dimensional hole gas (2DHG)
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U2 - 10.1109/NMDC50713.2021.9677505
DO - 10.1109/NMDC50713.2021.9677505
M3 - Conference contribution
AN - SCOPUS:85125295277
T3 - 2021 IEEE 16th Nanotechnology Materials and Devices Conference, NMDC 2021
BT - 2021 IEEE 16th Nanotechnology Materials and Devices Conference, NMDC 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE Nanotechnology Materials and Devices Conference, NMDC 2021
Y2 - 12 December 2021 through 15 December 2021
ER -