Effect of the MgO substrate on the growth of GaN

R. Suzuki, A. Kawaharazuka*, Y. Horikoshi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


We investigate the effect of the MgO substrate on the growth of GaN by molecular beam epitaxy with radio frequency plasma source. MgO substrate is advantageous for its closer lattice constant to GaN. However, epitaxial GaN layer grown on MgO (1 1 1) substrate is often inclined about 2{ring operator} toward a particular a-axis of the GaN. This inclination is found to be caused by the domain structure of the MgO substrates. On the tilted domains of the substrate, the strain is effectively relaxed through the inclination. Another difficulty of MgO substrate is the diffusion of Mg atoms into the GaN layer. This Mg diffusion from the MgO substrate has successfully been suppressed by introducing the thin low-temperature grown AlN buffer layer. The AlN buffer also improves the crystalline quality of the GaN layer.

Original languageEnglish
Pages (from-to)2021-2024
Number of pages4
JournalJournal of Crystal Growth
Issue number7
Publication statusPublished - 2009 Mar 15


  • A1. Diffusion
  • A1. Growth models
  • A1. X-ray diffraction
  • A3. Molecular beam epitaxy
  • B1. Nitrides
  • B1. Oxides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry


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