EFFECT OF THE SUBTHRESHOLD CURRENT ON SCALED-DOWN MOS DYNAMIC RAM's.

Koichiro Mashiko; Michihiro Yamada; Yasuji Nagayama; Tsutomu Yoshihara; Takao Nakano

EFFECT OF THE SUBTHRESHOLD CURRENT ON SCALED-DOWN MOS DYNAMIC RAM's.

Koichiro Mashiko^*, Michihiro Yamada, Yasuji Nagayama, Tsutomu Yoshihara, Takao Nakano

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Data-output holding characteristics of MOS dynamic RAM's with 2. 5 mu m design rules are studied by employing the hidden-RAS-only-refresh mode. It is verified that the noise voltage caused by internal circuit operation increases the subthreshold current and that the clamp circuitry effectively decreases the subthreshold current.

Original language	English
Pages (from-to)	429-431
Number of pages	3
Journal	IEEE Journal of Solid-State Circuits
Volume	SC-18
Issue number	4
Publication status	Published - 1983 Aug
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "EFFECT OF THE SUBTHRESHOLD CURRENT ON SCALED-DOWN MOS DYNAMIC RAM's.",

abstract = "Data-output holding characteristics of MOS dynamic RAM's with 2. 5 mu m design rules are studied by employing the hidden-RAS-only-refresh mode. It is verified that the noise voltage caused by internal circuit operation increases the subthreshold current and that the clamp circuitry effectively decreases the subthreshold current.",

author = "Koichiro Mashiko and Michihiro Yamada and Yasuji Nagayama and Tsutomu Yoshihara and Takao Nakano",

year = "1983",

month = aug,

language = "English",

volume = "SC-18",

pages = "429--431",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

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T1 - EFFECT OF THE SUBTHRESHOLD CURRENT ON SCALED-DOWN MOS DYNAMIC RAM's.

AU - Mashiko, Koichiro

AU - Yamada, Michihiro

AU - Nagayama, Yasuji

AU - Yoshihara, Tsutomu

AU - Nakano, Takao

PY - 1983/8

Y1 - 1983/8

N2 - Data-output holding characteristics of MOS dynamic RAM's with 2. 5 mu m design rules are studied by employing the hidden-RAS-only-refresh mode. It is verified that the noise voltage caused by internal circuit operation increases the subthreshold current and that the clamp circuitry effectively decreases the subthreshold current.

AB - Data-output holding characteristics of MOS dynamic RAM's with 2. 5 mu m design rules are studied by employing the hidden-RAS-only-refresh mode. It is verified that the noise voltage caused by internal circuit operation increases the subthreshold current and that the clamp circuitry effectively decreases the subthreshold current.

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M3 - Article

AN - SCOPUS:0020796917

SN - 0018-9200

VL - SC-18

SP - 429

EP - 431

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 4

ER -

EFFECT OF THE SUBTHRESHOLD CURRENT ON SCALED-DOWN MOS DYNAMIC RAM's.

Abstract

ASJC Scopus subject areas

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