TY - JOUR
T1 - Effect of the Thermal Boundary Resistance in Metal/Dielectric Thermally Conductive Layers on Power Generation of Silicon Nanowire Microthermoelectric Generators
AU - Zhan, Tianzhuo
AU - Ma, Shuaizhe
AU - Jin, Zhicheng
AU - Takezawa, Hiroki
AU - Mesaki, Kohei
AU - Tomita, Motohiro
AU - Wu, Yen Ju
AU - Xu, Yibin
AU - Matsukawa, Takashi
AU - Matsuki, Takeo
AU - Watanabe, Takanobu
N1 - Funding Information:
This work was supported by a CREST grant (JPMJCR19Q5) from the Japan Science and Technology Agency (JST) and a research grant (BXRC00681601) from the Hirose International Scholarship Foundation.
Publisher Copyright:
Copyright © 2020 American Chemical Society.
PY - 2020/7/29
Y1 - 2020/7/29
N2 - In microthermoelectric generators (μTEGs), parasitic thermal resistance must be suppressed to increase the temperature difference across thermocouples for optimum power generation. A thermally conductive (TC) layer is typically used in μTEGs to guide the heat flow from the heat source to the hot junction of each thermocouple. In this study, we investigate the effect of the thermal boundary resistance (TBR) in metal/dielectric TC layers on the power generation of silicon nanowire (SiNW) μTEGs. We prepared various metal/adhesion/dielectric TC layers using different metal, adhesion, and dielectric layers and measured the thermal resistance using the frequency-domain thermoreflectance method. We found that the thermal resistance was significantly different, mainly due to the TBR of the metal/dielectric interfaces. Interface characterization highlights the significant role of the interfacial bonding strength and interdiffusion in TBR. We fabricated a prototype SiNW-μTEG with different TC layers for testing, finding that the power generation increased significantly when the thermal resistance of the TC layer was lowered. This study helps to understand the underlying physics of thermal transport at interfaces and provides a guideline for the design and fabrication of μTEGs to enhance power generation for effective energy harvesting.
AB - In microthermoelectric generators (μTEGs), parasitic thermal resistance must be suppressed to increase the temperature difference across thermocouples for optimum power generation. A thermally conductive (TC) layer is typically used in μTEGs to guide the heat flow from the heat source to the hot junction of each thermocouple. In this study, we investigate the effect of the thermal boundary resistance (TBR) in metal/dielectric TC layers on the power generation of silicon nanowire (SiNW) μTEGs. We prepared various metal/adhesion/dielectric TC layers using different metal, adhesion, and dielectric layers and measured the thermal resistance using the frequency-domain thermoreflectance method. We found that the thermal resistance was significantly different, mainly due to the TBR of the metal/dielectric interfaces. Interface characterization highlights the significant role of the interfacial bonding strength and interdiffusion in TBR. We fabricated a prototype SiNW-μTEG with different TC layers for testing, finding that the power generation increased significantly when the thermal resistance of the TC layer was lowered. This study helps to understand the underlying physics of thermal transport at interfaces and provides a guideline for the design and fabrication of μTEGs to enhance power generation for effective energy harvesting.
KW - diffusion
KW - interfacial bonding strength
KW - metal/dielectric interface
KW - silicon nanowire thermoelectric generator
KW - thermal boundary resistance
KW - thermally conductive layer
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U2 - 10.1021/acsami.0c09253
DO - 10.1021/acsami.0c09253
M3 - Article
C2 - 32635712
AN - SCOPUS:85089707883
SN - 1944-8244
VL - 12
SP - 34441
EP - 34450
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
IS - 30
ER -