TY - JOUR
T1 - Effective Hamiltonian for cuprate superconductors derived from multiscale ab initio scheme with level renormalization
AU - Hirayama, Motoaki
AU - Misawa, Takahiro
AU - Ohgoe, Takahiro
AU - Yamaji, Youhei
AU - Imada, Masatoshi
N1 - Funding Information:
They are indebted to Takashi Miyake for his advice. The authors acknowledge Terumasa Tadano, Yusuke Nomura, and Kota Ido for useful discussions. This work is financially supported by the MEXT HPCI Strategic Programs, and the Creation of New Functional Devices and High-Performance Materials to Support Next Generation Industries (CDMSI). This work was also supported by a Grant-in-Aid for Scientific Research (Grants No. 16H06345 and No. 16K17746) from MEXT, Japan. T.M. was supported by Building of Consortia for the Development of Human Resources in Science and Technology from the MEXT of Japan. T.O. was supported by a Grant-in-Aid for Scientific Research No.18K13477. The simulations were partially performed on the K computer provided by the RIKEN Advanced Institute for Computational Science under the HPCI System Research project (Grants No. hp170263 and No. hp180170). The calculations were also performed on computers at the Supercomputer Center, Institute for Solid State Physics, the University of Tokyo.
Publisher Copyright:
© 2019 American Physical Society.
PY - 2019/6/27
Y1 - 2019/6/27
N2 - Three types (three-band, two-band, and one-band) of effective Hamiltonians for HgBa2CuO4 and three-band effective Hamiltonian for La2CuO4 are derived by improving the constrained-GW approximation combined with the self-interaction correction (cGW-SIC) formulated by Hirayama et al. [Phys. Rev. B 98, 134501 (2018)2469-995010.1103/PhysRevB.98.134501]. The improved treatment of the interband Hartree energy in the present paper turns out to be crucially important, because the solution of the present improved Hamiltonian shows excellent agreement with the experimental results, for instance, for the charge gap (2 eV) and antiferromagnetic ordered moment (0.6μB) of the mother compound of La2CuO4, in sharp contrast to the estimates by the previous Hamiltonian, 4.5 eV and 0.8μB, respectively. To our knowledge, this is the first simultaneous and quantitative reproduction of these quantities by abinitio methods without introducing adjustable parameters. We also predict that the Mott gap and the magnetic ordered moment for HgBa2CuO4 is about 0.7 eV and 0.4μB, respectively, if the mother compound becomes available, indicating weaker electron correlations than La2CuO4. Surprisingly, we find that while carriers are doped only in the highest antibonding band, only the Cu 3dx2-y2 (O 2p) carriers look doped in the electron (hole) doped side around the zero doping in the atomic orbital basis, implying that the Mott-Hubbard (single-band) and charge transfer (three-band) descriptions are both correct. The obtained Hamiltonians will serve to further clarify the electronic structures of these copper oxide superconductors and to elucidate the superconducting mechanism in an ab initio fashion.
AB - Three types (three-band, two-band, and one-band) of effective Hamiltonians for HgBa2CuO4 and three-band effective Hamiltonian for La2CuO4 are derived by improving the constrained-GW approximation combined with the self-interaction correction (cGW-SIC) formulated by Hirayama et al. [Phys. Rev. B 98, 134501 (2018)2469-995010.1103/PhysRevB.98.134501]. The improved treatment of the interband Hartree energy in the present paper turns out to be crucially important, because the solution of the present improved Hamiltonian shows excellent agreement with the experimental results, for instance, for the charge gap (2 eV) and antiferromagnetic ordered moment (0.6μB) of the mother compound of La2CuO4, in sharp contrast to the estimates by the previous Hamiltonian, 4.5 eV and 0.8μB, respectively. To our knowledge, this is the first simultaneous and quantitative reproduction of these quantities by abinitio methods without introducing adjustable parameters. We also predict that the Mott gap and the magnetic ordered moment for HgBa2CuO4 is about 0.7 eV and 0.4μB, respectively, if the mother compound becomes available, indicating weaker electron correlations than La2CuO4. Surprisingly, we find that while carriers are doped only in the highest antibonding band, only the Cu 3dx2-y2 (O 2p) carriers look doped in the electron (hole) doped side around the zero doping in the atomic orbital basis, implying that the Mott-Hubbard (single-band) and charge transfer (three-band) descriptions are both correct. The obtained Hamiltonians will serve to further clarify the electronic structures of these copper oxide superconductors and to elucidate the superconducting mechanism in an ab initio fashion.
UR - http://www.scopus.com/inward/record.url?scp=85068869525&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85068869525&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.99.245155
DO - 10.1103/PhysRevB.99.245155
M3 - Article
AN - SCOPUS:85068869525
SN - 2469-9950
VL - 99
JO - Physical Review B
JF - Physical Review B
IS - 24
M1 - 245155
ER -