Effective write-reduction method for MLC non-volatile memory

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recently, the requirement for non-volatile memory on embedded systems has increased because they can be applied with normally-off and power gating technologies to. However, they have a lower endurance than volatile memories. When data is encoded as a write-reduction code appropriately, the endurance of non-volatile memory can be enhanced by writing the encoded data into the memory. We propose a highly effective write-reduction method for a multi-level cell (MLC) non-volatile memory focusing on the write-reduction code (WRC) as the optimal bit-write reduction method. The WRC can be applied only to single-level cell non-volatile memory. The proposed method generates a cell-write reduction code based on the WRC; the cell has multiple bits as the holdable data. Our proposed method achieves a cell-write reduction by 31.6% compared to the conventional method.

Original languageEnglish
Title of host publicationIEEE International Symposium on Circuits and Systems
Subtitle of host publicationFrom Dreams to Innovation, ISCAS 2017 - Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467368520
DOIs
Publication statusPublished - 2017 Sept 25
Event50th IEEE International Symposium on Circuits and Systems, ISCAS 2017 - Baltimore, United States
Duration: 2017 May 282017 May 31

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Other

Other50th IEEE International Symposium on Circuits and Systems, ISCAS 2017
Country/TerritoryUnited States
CityBaltimore
Period17/5/2817/5/31

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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