TY - GEN
T1 - Effects of biexciton on the polarization-sensitive cavity polariton beats in the third-order regime
AU - Aoki, T.
AU - Svirko, Y. P.
AU - Kuwata-Gonokami, M.
AU - Gibbs, H. M.
PY - 2001/1/1
Y1 - 2001/1/1
N2 - The third-order nonlinear response of the strongly coupled cavity-exciton system shows strong signatures of the long- and short-living four-particle correlations, which manifest themselves in polarization-sensitive four-wave mixing (FWM). In particular, the long-living correlation due to the biexciton may dominate in the third-order nonlinearity of the exciton-cavity system. In presence of inhomogeneous broadening, biexciton gives rise to the oscillation in the time-integrated (TI) FWM signal at positive time delay with biexciton binding frequency, ωb, allowing one to estimate biexciton contribution to the third-order nonlinearity. However, in the strongly coupled exciton-cavity system, TI FWM measurements have been performed only in a polarization configuration that does not permit the biexcitonic contribution. We report on the observation of the biexcitonic signature in the TI FWM signal from a semiconductor microcavity with an In0.03Ga0.97As single quantum well.
AB - The third-order nonlinear response of the strongly coupled cavity-exciton system shows strong signatures of the long- and short-living four-particle correlations, which manifest themselves in polarization-sensitive four-wave mixing (FWM). In particular, the long-living correlation due to the biexciton may dominate in the third-order nonlinearity of the exciton-cavity system. In presence of inhomogeneous broadening, biexciton gives rise to the oscillation in the time-integrated (TI) FWM signal at positive time delay with biexciton binding frequency, ωb, allowing one to estimate biexciton contribution to the third-order nonlinearity. However, in the strongly coupled exciton-cavity system, TI FWM measurements have been performed only in a polarization configuration that does not permit the biexcitonic contribution. We report on the observation of the biexcitonic signature in the TI FWM signal from a semiconductor microcavity with an In0.03Ga0.97As single quantum well.
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U2 - 10.1109/QELS.2001.979950
DO - 10.1109/QELS.2001.979950
M3 - Conference contribution
AN - SCOPUS:0010287421
T3 - Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001
BT - Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - Quantum Electronics and Laser Science Conference, QELS 2001
Y2 - 6 May 2001 through 11 May 2001
ER -