@inproceedings{f75807b7516b46b4b162395123412045,
title = "Effects of crystalline polarity and temperature gradient on step bunching behavior of off-axis 4H-SiC solution growth",
abstract = "The off-axis solution growth of 4H-SiC was studied focusing on the morphological instabilities by using conventional TSSG technique. The morphology depends strongly on the crystalline polarity, and that on Si surface can be characterized by wandering while that on C surface is characterized by strong step-bunching. By raising the temperature gradient, step bunching on Si surface is considerably suppressed which can be consistent to the constitutional super cooling scheme. However, C surface exhibits strong step bunching as the temperature gradient increase. These behaviors can be explained by the difference in Ehrlich-Schwoebel barrier and diffusion behavior of adatoms.",
keywords = "4H-SiC, Off-axis, Polarity, Solution growth, Step bunching, Temperature gradient, Wandering",
author = "S. Endo and K. Kamei and Y. Kishida and K. Moriguchi",
year = "2015",
doi = "10.4028/www.scientific.net/MSF.821-823.26",
language = "English",
isbn = "9783038354789",
volume = "821-823",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "26--30",
booktitle = "Materials Science Forum",
note = "European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 ; Conference date: 21-09-2014 Through 25-09-2014",
}