Effects of double-cladding structure on LPE-grown InGaAsP/InP lasers in the 1.5 µm range

Shigeyuki Akiba; Kazuo Sakai; Yuichi Matsushima; Takaya Yamamoto

doi:10.1143/JJAP.19.L79

Effects of double-cladding structure on LPE-grown InGaAsP/InP lasers in the 1.5 µm range

Shigeyuki Akiba, Kazuo Sakai, Yuichi Matsushima, Takaya Yamamoto

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The effects of a double-cladding structure, made on an active layer and consisting of a quaternary buffer layer and an InP layer, on LPE-grown InGaAsP/InP lasers in the 1.5 µm range are reported. A smoother hetero-interface, lower threshold current density and smaller threshold current temperature dependence were obtained in comparison with DH lasers having only a quaternary cladding layer. As for reliability, no undersirable effects due to the insertion of an additional buffer layer have been found.

Original language	English
Pages (from-to)	L79-L82
Journal	Japanese Journal of Applied Physics
Volume	19
Issue number	2
DOIs	https://doi.org/10.1143/JJAP.19.L79
Publication status	Published - 1980
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "The effects of a double-cladding structure, made on an active layer and consisting of a quaternary buffer layer and an InP layer, on LPE-grown InGaAsP/InP lasers in the 1.5 µm range are reported. A smoother hetero-interface, lower threshold current density and smaller threshold current temperature dependence were obtained in comparison with DH lasers having only a quaternary cladding layer. As for reliability, no undersirable effects due to the insertion of an additional buffer layer have been found.",

author = "Shigeyuki Akiba and Kazuo Sakai and Yuichi Matsushima and Takaya Yamamoto",

year = "1980",

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AU - Akiba, Shigeyuki

AU - Sakai, Kazuo

AU - Matsushima, Yuichi

AU - Yamamoto, Takaya

PY - 1980

Y1 - 1980

N2 - The effects of a double-cladding structure, made on an active layer and consisting of a quaternary buffer layer and an InP layer, on LPE-grown InGaAsP/InP lasers in the 1.5 µm range are reported. A smoother hetero-interface, lower threshold current density and smaller threshold current temperature dependence were obtained in comparison with DH lasers having only a quaternary cladding layer. As for reliability, no undersirable effects due to the insertion of an additional buffer layer have been found.

AB - The effects of a double-cladding structure, made on an active layer and consisting of a quaternary buffer layer and an InP layer, on LPE-grown InGaAsP/InP lasers in the 1.5 µm range are reported. A smoother hetero-interface, lower threshold current density and smaller threshold current temperature dependence were obtained in comparison with DH lasers having only a quaternary cladding layer. As for reliability, no undersirable effects due to the insertion of an additional buffer layer have been found.

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Effects of double-cladding structure on LPE-grown InGaAsP/InP lasers in the 1.5 µm range

Abstract

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