TY - GEN
T1 - Effects of energetic negative ions generated from sputtering targets on ScAlN film growth
AU - Takayanagi, Shinji
AU - Matsukawa, Mami
AU - Yanagitani, Takahiko
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/11/1
Y1 - 2016/11/1
N2 - ScAlN films is attractive for high-frequency piezoelectric devices. In previous study, we demonstrated Sc ingot sputtering in which Sc ingots were set on an Al metal target. Oxidization of Sc ingots was seriously problem because the c-axis orientation of ScAlN films was degraded. In this study, we investigated the energy distributions of O- negative ion which enter the substrate during the deposition. The amount of the O- ion flux decreased with duration, but it remained large. Therefore, the crystalline orientation and the longitudinal mode conversion loss of ScAlN film were inferior to those using a ScAl alloy target. The suppression of the O- generation is required.
AB - ScAlN films is attractive for high-frequency piezoelectric devices. In previous study, we demonstrated Sc ingot sputtering in which Sc ingots were set on an Al metal target. Oxidization of Sc ingots was seriously problem because the c-axis orientation of ScAlN films was degraded. In this study, we investigated the energy distributions of O- negative ion which enter the substrate during the deposition. The amount of the O- ion flux decreased with duration, but it remained large. Therefore, the crystalline orientation and the longitudinal mode conversion loss of ScAlN film were inferior to those using a ScAl alloy target. The suppression of the O- generation is required.
KW - AlN
KW - Negative ion
KW - ScAlN
KW - Sputtering deposition
KW - Sputtering target
UR - http://www.scopus.com/inward/record.url?scp=84996508753&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84996508753&partnerID=8YFLogxK
U2 - 10.1109/ULTSYM.2016.7728836
DO - 10.1109/ULTSYM.2016.7728836
M3 - Conference contribution
AN - SCOPUS:84996508753
T3 - IEEE International Ultrasonics Symposium, IUS
BT - 2016 IEEE International Ultrasonics Symposium, IUS 2016
PB - IEEE Computer Society
T2 - 2016 IEEE International Ultrasonics Symposium, IUS 2016
Y2 - 18 September 2016 through 21 September 2016
ER -