Effects of ion implantation on oxygen vacancies in YSZ

Yasuhiro Kuroda, Takaaki Morimoto, Yoshimichi Ohki*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review


    Photoluminescence (PL) due to oxygen vacancies appearing in yttria-stabilized zirconia (YSZ) decreases clearly by ion implantation in both bulky single crystal plates and thin multicrystal films. This indicates that segregation into Y2O3 and ZrO2 and change in charging state of oxygen vacancy occur similarly in the two substances despite big differences in their thicknesses and morphologies.

    Original languageEnglish
    Pages (from-to)592-593
    Number of pages2
    JournalIEEJ Transactions on Fundamentals and Materials
    Issue number9
    Publication statusPublished - 2016


    • Ion implantation
    • Oxygen vacancy
    • Photoluminescence
    • Visible-uv absorption
    • Yttria-stabilized zirconia

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering


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