Effects of nanofiller materials on the dielectric properties of epoxy nanocomposites

J. Katayama*, Y. Ohki, N. Fuse, M. Kozako, T. Tanaka

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

91 Citations (Scopus)

Abstract

Effects of nanofiller materials on typical dielectric properties of bisphenol-A epoxy resin were compared among three kinds of nanofillers, i. e. boehmite alumina, titania, and silica. In all the samples, the complex permittivity εr' and εr become significantly higher with an increase in temperature beyond 120 °C, especially at low frequencies. Such increase iinεr' and εr indicates the abundance of mobile charge carriers, which was verified by the space charge distribution measurements. All the samples show two peaks at 110 and 180 °C in the thermally stimulated depolarization current spectra. The lower-temperature peak is apparently caused by depolarization of dipoles induced by the glass transition, while the higher-temperature peak is due to the release of space charge. These characteristic properties appear more significantly in the nanocomposites with boehmite alumina and titania and less significantly in the nanocomposite with silica than in the neat epoxy esin. This indicates that the silica nanofillers give the best results as far as these properties cconcerned. The suppression of molecular motion by the addition of nanofillers seems to work effectively in the case of silica, while the nanofiller addition is likely to aaccelerate the motion of ionic carriers and/or that of dipoles in the case of boehmite alumina and titania.

Original languageEnglish
Article number6451354
Pages (from-to)157-165
Number of pages9
JournalIEEE Transactions on Dielectrics and Electrical Insulation
Volume20
Issue number1
DOIs
Publication statusPublished - 2013

Keywords

  • Nanocomposites
  • complex permittivity
  • conductivity
  • epoxy resin
  • space charge distribution
  • thermally stimulated depolarization current

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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