Abstract
We have studied the effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties in detail for the surface channel PMOS below 0.25 μm. It was founded that boron penetration through the gate oxide film can be effectively suppressed by nitrogen implantation into P+ poly-silicon gate. Moreover the generation of interface states and traps can be also reduced by nitrogen implantation. Therefore the resistance against the hot carrier injection can be dramatically improved. These improvement would be due to the incorporation of nitrogen into gate oxide film and the reduction of boron and fluorine atoms in the gate oxide film.
| Original language | English |
|---|---|
| Pages (from-to) | 107-108 |
| Number of pages | 2 |
| Journal | Digest of Technical Papers - Symposium on VLSI Technology |
| Publication status | Published - 1994 Dec 1 |
| Externally published | Yes |
| Event | Proceedings of the 1994 Symposium on VLSI Technology - Honolulu, HI, USA Duration: 1994 Jun 7 → 1994 Jun 9 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering