Effects of ozone treatment of 4H-SiC(0001) surface

R. Kosugi*, S. Ichimura, A. Kurokawa, K. Koike, K. Fukuda, S. Suzuki, H. Okushi, S. Yoshida, K. Arai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

13 Citations (Scopus)


The effects of high-concentration ozone gas ( approximately 25%) exposure at atmospheric pressure with and without ultraviolet (UV) irradiation to a 4H-SiC(0001) surface has been investigated by X-ray photoelectron spectroscopy (XPS). The C 1s XPS spectrum for the 4H-SiC surface after standard RCA cleaning showed the appearance of a chemically shifted peak on the higher binding energy side of the SiC bulk peak. The chemically shifted peak was also observed even for the surface prepared by dipping a sample with sacrificed oxide film into 5% HF solution. Curve-fitting analysis using the Gaussian function revealed that the chemically shifted peak consisted of three components. The chemically shifted peak could be sufficiently eliminated using ozone exposure with UV irradiation. The cleaning mechanism of the 4H-SiC surface by ozone exposure is discussed, referring to the analysis of peak intensity for each component under different surface conditions corresponding to RCA cleaning and ozone exposure with and without UV irradiation.

Original languageEnglish
Pages (from-to)550-555
Number of pages6
JournalApplied Surface Science
Publication statusPublished - 2000 Jun
Externally publishedYes
Event3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3) - Karuizawa, Jpn
Duration: 1999 Oct 251999 Oct 29

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces


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