At the low pressure of 0.1 Torr, we have controlled the plasma potential during diamond deposition for the first time using a magneto-microwave plasma chemical vapor deposition (CVD) system. The potential difference between plasma and substrate is an important factor for fabrication of diamond at this pressure. By lowering the plasma potential, high-quality diamond films have been formed. The films were evaluated by scanning electron microscope (SM) imaging, electron diffraction and Raman spectroscopy.
|Number of pages
|Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
|Published - 1991 Jun
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy