Effects of plasma potential on diamond deposition at low pressure using magneto-microwave plasma chemical vapor deposition

Jin Wei; Hiroshi Kawarada; Jun Ichi Suzuki; Jing Shing Ma; Akio Hiraki

doi:10.1143/JJAP.30.1279

Effects of plasma potential on diamond deposition at low pressure using magneto-microwave plasma chemical vapor deposition

Jin Wei, Hiroshi Kawarada, Jun Ichi Suzuki, Jing Shing Ma, Akio Hiraki

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

At the low pressure of 0.1 Torr, we have controlled the plasma potential during diamond deposition for the first time using a magneto-microwave plasma chemical vapor deposition (CVD) system. The potential difference between plasma and substrate is an important factor for fabrication of diamond at this pressure. By lowering the plasma potential, high- quality diamond films have been formed. The films were evaluated by scanning electron microscope (SM) imaging, electron diffraction and Raman spectroscopy.

Original language	English
Pages (from-to)	L279-L280
Journal	Japanese journal of applied physics
Volume	30
Issue number	6 R
DOIs	https://doi.org/10.1143/JJAP.30.1279
Publication status	Published - 1991 Jun

Keywords

Cvd
Diamond film
Ecr
Plasma potential
Potential difference

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.30.1279

Cite this

@article{9e5297647a964f839f65fac607c6ee3e,

title = "Effects of plasma potential on diamond deposition at low pressure using magneto-microwave plasma chemical vapor deposition",

abstract = "At the low pressure of 0.1 Torr, we have controlled the plasma potential during diamond deposition for the first time using a magneto-microwave plasma chemical vapor deposition (CVD) system. The potential difference between plasma and substrate is an important factor for fabrication of diamond at this pressure. By lowering the plasma potential, high- quality diamond films have been formed. The films were evaluated by scanning electron microscope (SM) imaging, electron diffraction and Raman spectroscopy.",

keywords = "Cvd, Diamond film, Ecr, Plasma potential, Potential difference",

author = "Jin Wei and Hiroshi Kawarada and Suzuki, {Jun Ichi} and Ma, {Jing Shing} and Akio Hiraki",

year = "1991",

month = jun,

doi = "10.1143/JJAP.30.1279",

language = "English",

volume = "30",

pages = "L279--L280",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6 R",

}

TY - JOUR

T1 - Effects of plasma potential on diamond deposition at low pressure using magneto-microwave plasma chemical vapor deposition

AU - Wei, Jin

AU - Kawarada, Hiroshi

AU - Suzuki, Jun Ichi

AU - Ma, Jing Shing

AU - Hiraki, Akio

PY - 1991/6

Y1 - 1991/6

N2 - At the low pressure of 0.1 Torr, we have controlled the plasma potential during diamond deposition for the first time using a magneto-microwave plasma chemical vapor deposition (CVD) system. The potential difference between plasma and substrate is an important factor for fabrication of diamond at this pressure. By lowering the plasma potential, high- quality diamond films have been formed. The films were evaluated by scanning electron microscope (SM) imaging, electron diffraction and Raman spectroscopy.

AB - At the low pressure of 0.1 Torr, we have controlled the plasma potential during diamond deposition for the first time using a magneto-microwave plasma chemical vapor deposition (CVD) system. The potential difference between plasma and substrate is an important factor for fabrication of diamond at this pressure. By lowering the plasma potential, high- quality diamond films have been formed. The films were evaluated by scanning electron microscope (SM) imaging, electron diffraction and Raman spectroscopy.

KW - Cvd

KW - Diamond film

KW - Ecr

KW - Plasma potential

KW - Potential difference

UR - http://www.scopus.com/inward/record.url?scp=84956226642&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84956226642&partnerID=8YFLogxK

U2 - 10.1143/JJAP.30.1279

DO - 10.1143/JJAP.30.1279

M3 - Article

AN - SCOPUS:84956226642

SN - 0021-4922

VL - 30

SP - L279-L280

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 6 R

ER -

Effects of plasma potential on diamond deposition at low pressure using magneto-microwave plasma chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this