Effects of sputtering gas conditions on formation of (1120) textured ZnO films

Takayuki Kawamoto*, Takahiko Yanagitani, Mami Matsukawa, Yoshiaki Watanabe

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


The ZnO films in which the crystallite c-axis is unidirectionally aligned in the substrate plane [(112̄0) textured ZnO films] enable the realization of shear mode devices in the ultra high frequency (UHF) range. In this study, we have investigated the (112̄0 textured ZnO film, focusing on the effect of total gas pressure and partial gas pressure of oxygen and argon during sputtering deposition. The crystallographic characteristics of the films were measured by X-ray diffraction (XRD) analysis. In addition, optical emissions from the RF plasma were analyzed to investigate the effect of ionic species on the growth of the ZnO films. Highly crystallized (112̄0) textured ZnO films were obtained under the conditions of low total gas pressure and high oxygen gas concentration. Under these conditions, strong optical emission spectra from oxygen species were observed. From these results, we conclude that energetic oxygen particle bombardment to the substrate contributes to the (112̄0) texture formation. The film with an ω-scan rocking curve FWHM of 3.3° showed a k15 value of 0.16, which was 62% of the value for a single crystal.

Original languageEnglish
Pages (from-to)4660-4664
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number7 B
Publication statusPublished - 2007 Jul 26
Externally publishedYes


  • (112̄0) textured ZnO films
  • Optical emission spectroscopy
  • RF magnetron sputtering
  • Sputtering gas condition
  • XRD measurement

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


Dive into the research topics of 'Effects of sputtering gas conditions on formation of (1120) textured ZnO films'. Together they form a unique fingerprint.

Cite this