Effects of Strain on Carrier Recombination in GaN Quantum Dots

A. Neogi; H. O. Everitt; H. Morkoç; T. Kuroda; A. Tackeuchi

Effects of Strain on Carrier Recombination in GaN Quantum Dots

A. Neogi^*, H. O. Everitt, H. Morkoç, T. Kuroda, A. Tackeuchi

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.

Original language	English
Title of host publication	Quantum Electronics and Laser Science Conference, QELS 2003
Publisher	Optica Publishing Group (formerly OSA)
ISBN (Electronic)	1557527490, 9781557527493
Publication status	Published - 2003
Event	Quantum Electronics and Laser Science Conference, QELS 2003 - Baltimore, United States Duration: 2003 Jun 1 → 2003 Jun 6

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Conference

Conference	Quantum Electronics and Laser Science Conference, QELS 2003
Country/Territory	United States
City	Baltimore
Period	03/6/1 → 03/6/6

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials

Cite this

Neogi, A, Everitt, HO, Morkoç, H, Kuroda, T & Tackeuchi, A 2003, Effects of Strain on Carrier Recombination in GaN Quantum Dots. in Quantum Electronics and Laser Science Conference, QELS 2003., QWA16, Optics InfoBase Conference Papers, Optica Publishing Group (formerly OSA), Quantum Electronics and Laser Science Conference, QELS 2003, Baltimore, United States, 03/6/1.

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title = "Effects of Strain on Carrier Recombination in GaN Quantum Dots",

abstract = "Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.",

author = "A. Neogi and Everitt, {H. O.} and H. Morko{\c c} and T. Kuroda and A. Tackeuchi",

note = "Publisher Copyright: {\textcopyright} 2003 OSA/QELS 2003.; Quantum Electronics and Laser Science Conference, QELS 2003 ; Conference date: 01-06-2003 Through 06-06-2003",

year = "2003",

language = "English",

series = "Optics InfoBase Conference Papers",

publisher = "Optica Publishing Group (formerly OSA)",

booktitle = "Quantum Electronics and Laser Science Conference, QELS 2003",

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TY - GEN

T1 - Effects of Strain on Carrier Recombination in GaN Quantum Dots

AU - Neogi, A.

AU - Everitt, H. O.

AU - Morkoç, H.

AU - Kuroda, T.

AU - Tackeuchi, A.

PY - 2003

Y1 - 2003

N2 - Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.

AB - Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=85135467780&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85135467780&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85135467780

T3 - Optics InfoBase Conference Papers

BT - Quantum Electronics and Laser Science Conference, QELS 2003

PB - Optica Publishing Group (formerly OSA)

T2 - Quantum Electronics and Laser Science Conference, QELS 2003

Y2 - 1 June 2003 through 6 June 2003

ER -

Effects of Strain on Carrier Recombination in GaN Quantum Dots

Abstract

Publication series

Conference

ASJC Scopus subject areas

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