Abstract
We report discrete photoluminescence (PL) spectra with narrow linewidths from spatially localized excitons obtained in InGaN quantum wells (QWs) that are of a similar structure to those used in conventional optical devices. A micro-PL measurement combined with submicrometer-scale fabrication techniques allows us to create a small number of excitons in a laser spot and to detect the PL from single spatially localized excitons. A sharp PL line (linewidth: 0.34 meV limited by the resolution) is clearly obtained in a 0.2 μm mesa-shaped QW, which originates from a single localized exciton. We show that the technique is a more powerful method of examining excitonic effects than previously reported methods.
Original language | English |
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Pages (from-to) | L1381-L1384 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 44 |
Issue number | 42-45 |
DOIs | |
Publication status | Published - 2005 |
Externally published | Yes |
Keywords
- InGaN quantum well
- Localized exciton
- Micro-PL technique
- Sharp PL line
- Submicrometer-scale fabrication
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)