TY - JOUR
T1 - Electric-field-induced resistance switching universally observed in transition-metal-oxide thin films
AU - Hamaguchi, M.
AU - Aoyama, K.
AU - Asanuma, S.
AU - Uesu, Y.
AU - Katsufuji, T.
N1 - Funding Information:
This work was partly supported by a Grant-in-Aid for The 21st Century COE Program (Physics of Self-organization Systems) at Waseda University, and also by a Grant-in-Aid for Young Scientists (A) and for Scientific Research (A) from MEXT of Japan.
PY - 2006/4/3
Y1 - 2006/4/3
N2 - We show that polarity-dependent, nonvolatile resistance switching by electric field occurs in the thin film of various transition-metal oxides in almost the same manner. This result indicates that, contrary to the general acceptance, perovskite manganite is by no means a special compound for this phenomenon. It is also suggested that the resistance switching is not dominated by a detailed electronic structure of each sample, but dominated by a more general origin, e.g., crystalline defect.
AB - We show that polarity-dependent, nonvolatile resistance switching by electric field occurs in the thin film of various transition-metal oxides in almost the same manner. This result indicates that, contrary to the general acceptance, perovskite manganite is by no means a special compound for this phenomenon. It is also suggested that the resistance switching is not dominated by a detailed electronic structure of each sample, but dominated by a more general origin, e.g., crystalline defect.
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U2 - 10.1063/1.2193328
DO - 10.1063/1.2193328
M3 - Article
AN - SCOPUS:33646673155
SN - 0003-6951
VL - 88
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 14
M1 - 142508
ER -