Electrical investigation of the interface band structure in rubrene single-crystal/nickel junction

Yuta Kitamura; Eiji Shikoh; Satria Zulkarnaen Bisri; Taishi Takenobu; Masashi Shiraishi

doi:10.1063/1.3615704

Electrical investigation of the interface band structure in rubrene single-crystal/nickel junction

Yuta Kitamura^*, Eiji Shikoh, Satria Zulkarnaen Bisri, Taishi Takenobu, Masashi Shiraishi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The electronic structure of the interface between rubrene (C ₄₂H₂₈) single crystal and ferromagnetic Ni is studied using an electrical method from a viewpoint of spintronics applications of organic single crystals. The Schottky barrier height at the interface is estimated to be 0.56 eV, and our finding is compared with previous results in spectroscopic method. This study clarifies the importance of electrical investigations of the Schottky barriers for various ferromagnet/organic systems and suggests that functionalization and carrier doping to rubrene single crystals are potential for obtaining the thinner barriers and yielding conclusive electrical spin injection.

Original language	English
Article number	043505
Journal	Applied Physics Letters
Volume	99
Issue number	4
DOIs	https://doi.org/10.1063/1.3615704
Publication status	Published - 2011 Jul 25

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3615704

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abstract = "The electronic structure of the interface between rubrene (C 42H28) single crystal and ferromagnetic Ni is studied using an electrical method from a viewpoint of spintronics applications of organic single crystals. The Schottky barrier height at the interface is estimated to be 0.56 eV, and our finding is compared with previous results in spectroscopic method. This study clarifies the importance of electrical investigations of the Schottky barriers for various ferromagnet/organic systems and suggests that functionalization and carrier doping to rubrene single crystals are potential for obtaining the thinner barriers and yielding conclusive electrical spin injection.",

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AU - Takenobu, Taishi

AU - Shiraishi, Masashi

PY - 2011/7/25

Y1 - 2011/7/25

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AB - The electronic structure of the interface between rubrene (C 42H28) single crystal and ferromagnetic Ni is studied using an electrical method from a viewpoint of spintronics applications of organic single crystals. The Schottky barrier height at the interface is estimated to be 0.56 eV, and our finding is compared with previous results in spectroscopic method. This study clarifies the importance of electrical investigations of the Schottky barriers for various ferromagnet/organic systems and suggests that functionalization and carrier doping to rubrene single crystals are potential for obtaining the thinner barriers and yielding conclusive electrical spin injection.

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Electrical investigation of the interface band structure in rubrene single-crystal/nickel junction

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