Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition

Hidefumi Sato; Hiromitsu Kato; Yoshimichi Ohki; Kwang Soo Seol; Takashi Noma

Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition

Hidefumi Sato^*, Hiromitsu Kato, Yoshimichi Ohki, Kwang Soo Seol, Takashi Noma

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to conference › Paper › peer-review

7 Citations (Scopus)

Abstract

The conduction mechanism of a-SiO_xN_y:H and a-SiN_z:H is studied by measuring the conduction current and the capacitance-voltage characteristics. The low-field conduction is attributable to the Ohmic process and the high-field conduction is attributable to the Poole-Frenkel (PF) emission for both materials. From the similarity on many aspects of conduction process between the two materials, it is considered that the carriers are transported via the same sites associated with Si-N bonds located in the forbidden band in both materials.

Original language	English
Pages	148-151
Number of pages	4
Publication status	Published - 2001 Dec 1
Event	Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems - Himeji, Japan Duration: 2001 Nov 19 → 2001 Nov 22

Conference

Conference	Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems
Country/Territory	Japan
City	Himeji
Period	01/11/19 → 01/11/22

ASJC Scopus subject areas

Engineering(all)
Materials Science(all)

Cite this

Sato, H., Kato, H., Ohki, Y., Seol, K. S., & Noma, T. (2001). Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition. 148-151. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.

Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition. / Sato, Hidefumi; Kato, Hiromitsu; Ohki, Yoshimichi et al.
2001. 148-151 Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.

Research output: Contribution to conference › Paper › peer-review

Sato, H, Kato, H, Ohki, Y, Seol, KS & Noma, T 2001, 'Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition', Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan, 01/11/19 - 01/11/22 pp. 148-151.

Sato H, Kato H, Ohki Y, Seol KS, Noma T. Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition. 2001. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.

Sato, Hidefumi ; Kato, Hiromitsu ; Ohki, Yoshimichi et al. / Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.4 p.

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AU - Sato, Hidefumi

AU - Kato, Hiromitsu

AU - Ohki, Yoshimichi

AU - Seol, Kwang Soo

AU - Noma, Takashi

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Y1 - 2001/12/1

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AB - The conduction mechanism of a-SiOxNy:H and a-SiNz:H is studied by measuring the conduction current and the capacitance-voltage characteristics. The low-field conduction is attributable to the Ohmic process and the high-field conduction is attributable to the Poole-Frenkel (PF) emission for both materials. From the similarity on many aspects of conduction process between the two materials, it is considered that the carriers are transported via the same sites associated with Si-N bonds located in the forbidden band in both materials.

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Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition

Abstract

Conference

ASJC Scopus subject areas

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