TY - GEN
T1 - Electrical properties of diamond MISFETs with submicron-sized gate on boron-doped (111) surface
AU - Saito, Takeyasu
AU - Park, Kyung Ho
AU - Hirama, Kazuyuki
AU - Umezawa, Hitoshi
AU - Satoh, Mitsuya
AU - Kawarada, Hiroshi
AU - Liu, Zhi Quan
AU - Mitsuishi, Kazutaka
AU - Okushi, Hideyo
PY - 2006/8/23
Y1 - 2006/8/23
N2 - An H-terminated-surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal insulator semiconductor field effect transistor (MISFET) using CaF2, SiO2 or Al 2O3 gate insulators and a Cu-metal stacked gate. For a CaF2 gate, the maximum measured drain current (Idmax) was 240 mA/mm and the maximum transconductance (gm) was 70 mS/mm, and the cut-off frequency of 4 GHz was obtained. For a SiO2 gate, I dmax and gm were 75 mA/mm and 24 mS/mm, respectively, and for an Al2O3 gate, these characteristics were 86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported DC and RF characteristics for a diamond homoepitaxial (111) MISFET.
AB - An H-terminated-surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal insulator semiconductor field effect transistor (MISFET) using CaF2, SiO2 or Al 2O3 gate insulators and a Cu-metal stacked gate. For a CaF2 gate, the maximum measured drain current (Idmax) was 240 mA/mm and the maximum transconductance (gm) was 70 mS/mm, and the cut-off frequency of 4 GHz was obtained. For a SiO2 gate, I dmax and gm were 75 mA/mm and 24 mS/mm, respectively, and for an Al2O3 gate, these characteristics were 86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported DC and RF characteristics for a diamond homoepitaxial (111) MISFET.
UR - http://www.scopus.com/inward/record.url?scp=33747355490&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33747355490&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:33747355490
SN - 1558998454
SN - 9781558998452
T3 - Materials Research Society Symposium Proceedings
SP - 485
EP - 490
BT - Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications
T2 - 2005 MRS Fall Meeting
Y2 - 28 November 2005 through 2 December 2005
ER -