Electrical properties of graphite/homoepitaxial diamond contact

Y. G. Chen*, M. Hasegawa, H. Okushi, S. Koizumi, H. Yoshida, T. Sakai, Naoto Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


We have studied the electrical properties of the graphitic electrodes formed in sulfur- and boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Sulfur-doped diamond films were achieved by sulfur ion implantation in undoped homoepitaxial diamond films. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistances were characterized by applying the linear transmission line model (TLM) and circular TLM extrapolation methods, and were determined to be 5.2 × 103 and 1.18 Ω·cm2, respectively.

Original languageEnglish
Pages (from-to)451-457
Number of pages7
JournalDiamond and Related Materials
Issue number3-6
Publication statusPublished - 2002 Mar
Externally publishedYes


  • Applications
  • Diamond films
  • Interface
  • Ohmic contact

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces


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