Electrochemical properties of δ- and γ-MnO2 thin films deposited by a chemical bath technique

Terukazu Kondo, Yuta Matsushima, Keigo Matsuda, Hidero Unuma*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


In this study, γ- and δ-MnO2 thin films were deposited onto F-doped tin oxide glass substrates via a chemical bath deposition technique in which manganese (II) ions were oxidized by bromate ion in a homogeneous solution. The addition of cetyltrimethylammonium chlorate to the starting solutions resulted in the deposition of the δ-phase. The thin films showed rectangular cyclic voltammograms even at higher scan rates. The δ-phase films showed better specific capacitance than the γ-phase films. A 200-nm-thick δ-MnO2 film showed an excellent specific capacitance of 750 F/g at a scan rate of 10 mV/s.

Original languageEnglish
Pages (from-to)8001-8005
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Issue number8
Publication statusPublished - 2016 Aug 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Electrochemical properties of δ- and γ-MnO2 thin films deposited by a chemical bath technique'. Together they form a unique fingerprint.

Cite this