Electrodeposition of a Copper-Tellurium Compound under Diffusion-Limiting Control

Takahiro Ishizaki; Daisuke Yata; Akio Fuwa

Electrodeposition of a Copper-Tellurium Compound under Diffusion-Limiting Control

Takahiro Ishizaki^*, Daisuke Yata, Akio Fuwa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Copper-tellurium films were electrochemically deposited from a solution containing CuCl₂, TeO₂ and HCl. This study revealed the relationship between the copper/tellurium ratio in the solution and the metal ratio in the deposited film. The Cu/Te ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions. The [Cu]/[Te] ratio in the solution was linearly related to that of Cu/Te in the deposited film, since the partial current density originating from the copper and tellurium ions was directly proportional to the concentration of each. The deposited films crystallized to Cu₂Te at the Cu/Te ratio of 2.5. The films were deposited at -0.4 V vs. Ag/AgCl from a solution in which [Cu]/[Te] = 2.5, [CuCl₂] = 1.0 × 10^-3 M (= kmol m^-3), [TeO₂] = 4.0 × 10^-4 M, and pH = 1.

Original language	English
Pages (from-to)	1583-1587
Number of pages	5
Journal	Materials Transactions
Volume	44
Issue number	8
Publication status	Published - 2003 Aug

Keywords

Copper telluride
Deposition process
Electrochemistry

ASJC Scopus subject areas

Materials Science(all)
Metals and Alloys

Cite this

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title = "Electrodeposition of a Copper-Tellurium Compound under Diffusion-Limiting Control",

abstract = "Copper-tellurium films were electrochemically deposited from a solution containing CuCl2, TeO2 and HCl. This study revealed the relationship between the copper/tellurium ratio in the solution and the metal ratio in the deposited film. The Cu/Te ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions. The [Cu]/[Te] ratio in the solution was linearly related to that of Cu/Te in the deposited film, since the partial current density originating from the copper and tellurium ions was directly proportional to the concentration of each. The deposited films crystallized to Cu2Te at the Cu/Te ratio of 2.5. The films were deposited at -0.4 V vs. Ag/AgCl from a solution in which [Cu]/[Te] = 2.5, [CuCl2] = 1.0 × 10-3 M (= kmol m-3), [TeO2] = 4.0 × 10-4 M, and pH = 1.",

keywords = "Copper telluride, Deposition process, Electrochemistry",

author = "Takahiro Ishizaki and Daisuke Yata and Akio Fuwa",

year = "2003",

month = aug,

language = "English",

volume = "44",

pages = "1583--1587",

journal = "Materials Transactions",

issn = "1345-9678",

publisher = "Japan Institute of Metals (JIM)",

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}

TY - JOUR

T1 - Electrodeposition of a Copper-Tellurium Compound under Diffusion-Limiting Control

AU - Ishizaki, Takahiro

AU - Yata, Daisuke

AU - Fuwa, Akio

PY - 2003/8

Y1 - 2003/8

N2 - Copper-tellurium films were electrochemically deposited from a solution containing CuCl2, TeO2 and HCl. This study revealed the relationship between the copper/tellurium ratio in the solution and the metal ratio in the deposited film. The Cu/Te ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions. The [Cu]/[Te] ratio in the solution was linearly related to that of Cu/Te in the deposited film, since the partial current density originating from the copper and tellurium ions was directly proportional to the concentration of each. The deposited films crystallized to Cu2Te at the Cu/Te ratio of 2.5. The films were deposited at -0.4 V vs. Ag/AgCl from a solution in which [Cu]/[Te] = 2.5, [CuCl2] = 1.0 × 10-3 M (= kmol m-3), [TeO2] = 4.0 × 10-4 M, and pH = 1.

AB - Copper-tellurium films were electrochemically deposited from a solution containing CuCl2, TeO2 and HCl. This study revealed the relationship between the copper/tellurium ratio in the solution and the metal ratio in the deposited film. The Cu/Te ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions. The [Cu]/[Te] ratio in the solution was linearly related to that of Cu/Te in the deposited film, since the partial current density originating from the copper and tellurium ions was directly proportional to the concentration of each. The deposited films crystallized to Cu2Te at the Cu/Te ratio of 2.5. The films were deposited at -0.4 V vs. Ag/AgCl from a solution in which [Cu]/[Te] = 2.5, [CuCl2] = 1.0 × 10-3 M (= kmol m-3), [TeO2] = 4.0 × 10-4 M, and pH = 1.

KW - Copper telluride

KW - Deposition process

KW - Electrochemistry

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M3 - Article

AN - SCOPUS:0141957202

SN - 1345-9678

VL - 44

SP - 1583

EP - 1587

JO - Materials Transactions

JF - Materials Transactions

IS - 8

ER -

Electrodeposition of a Copper-Tellurium Compound under Diffusion-Limiting Control

Abstract

Keywords

ASJC Scopus subject areas

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