Electrodeposition of a Copper-Tellurium Compound under Diffusion-Limiting Control

Takahiro Ishizaki*, Daisuke Yata, Akio Fuwa

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    13 Citations (Scopus)


    Copper-tellurium films were electrochemically deposited from a solution containing CuCl2, TeO2 and HCl. This study revealed the relationship between the copper/tellurium ratio in the solution and the metal ratio in the deposited film. The Cu/Te ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions. The [Cu]/[Te] ratio in the solution was linearly related to that of Cu/Te in the deposited film, since the partial current density originating from the copper and tellurium ions was directly proportional to the concentration of each. The deposited films crystallized to Cu2Te at the Cu/Te ratio of 2.5. The films were deposited at -0.4 V vs. Ag/AgCl from a solution in which [Cu]/[Te] = 2.5, [CuCl2] = 1.0 × 10-3 M (= kmol m-3), [TeO2] = 4.0 × 10-4 M, and pH = 1.

    Original languageEnglish
    Pages (from-to)1583-1587
    Number of pages5
    JournalMaterials Transactions
    Issue number8
    Publication statusPublished - 2003 Aug


    • Copper telluride
    • Deposition process
    • Electrochemistry

    ASJC Scopus subject areas

    • Materials Science(all)
    • Metals and Alloys


    Dive into the research topics of 'Electrodeposition of a Copper-Tellurium Compound under Diffusion-Limiting Control'. Together they form a unique fingerprint.

    Cite this