TY - JOUR
T1 - Electrodeposition of Bi 2Te 3 films from ammoniacal basic solutions containing nitrilotriacetic acid
AU - Ishimori, Yasuhiro
AU - Ishizaki, Takahiro
AU - Ohtomo, Takeshi
AU - Fuwa, Akio
PY - 2004/6
Y1 - 2004/6
N2 - Bi 2Te 3 thin films were electrochemically deposited from ammonia-alkaline solution containing Bi(NO 3) 3, TeO 2, nitrilotriacetic acid (NTA), in which Bi (III) - and Te (IV) -species were dissolving to form Bi (NTA) 2 3- complex and TeO 3 2-, respectively. This study revealed the relationship between [Bi]/[Te] ratio in the solution and the respective metal ratio in the deposited film. The [Bi]/[Te] ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions, i.e. the [Bi]/[Te] ratio in the solution was linearly related to that of the deposited film, where the partial current density originating from bismuth and tellurium ion was directly proportional to the concentration of respective ions. Dense and crystalline Bi 2Te 3 thin films with stoichiometric composition were electrodeposited at the potential ranging from - 0.6 to - 0.8 V from 5.0 × 10 -3 kmol m -3 Bi(NO 3) 3·5H 2O, 3.0 × 10 -3 kmol m -3 TeO 2 and 0.1 kmol m -3 NTA solution, with cathodic current efficiencies being above 85%.
AB - Bi 2Te 3 thin films were electrochemically deposited from ammonia-alkaline solution containing Bi(NO 3) 3, TeO 2, nitrilotriacetic acid (NTA), in which Bi (III) - and Te (IV) -species were dissolving to form Bi (NTA) 2 3- complex and TeO 3 2-, respectively. This study revealed the relationship between [Bi]/[Te] ratio in the solution and the respective metal ratio in the deposited film. The [Bi]/[Te] ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions, i.e. the [Bi]/[Te] ratio in the solution was linearly related to that of the deposited film, where the partial current density originating from bismuth and tellurium ion was directly proportional to the concentration of respective ions. Dense and crystalline Bi 2Te 3 thin films with stoichiometric composition were electrodeposited at the potential ranging from - 0.6 to - 0.8 V from 5.0 × 10 -3 kmol m -3 Bi(NO 3) 3·5H 2O, 3.0 × 10 -3 kmol m -3 TeO 2 and 0.1 kmol m -3 NTA solution, with cathodic current efficiencies being above 85%.
KW - Bismuth telluride
KW - Electrodeposition
KW - Nitrilotriacetic acid
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U2 - 10.2320/jinstmet.68.406
DO - 10.2320/jinstmet.68.406
M3 - Article
AN - SCOPUS:4043177684
SN - 0021-4876
VL - 68
SP - 406
EP - 411
JO - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
JF - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
IS - 6
ER -