Electrodeposition of CuInTe2 film from an acidic solution

T. Ishizaki; N. Saito; A. Fuwa

doi:10.1016/j.surfcoat.2003.07.004

Electrodeposition of CuInTe₂ film from an acidic solution

T. Ishizaki^*, N. Saito, A. Fuwa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Copper-indium-telluride films were electrochemically deposited from solutions containing CuCl₂, InCl₃, TeO₂ and HCl. Although a flat and smooth film with closely stoichiometric composition was deposited at -660 mV vs. Ag/AgCl at 303 K from a solution of 2.5×10^-4 mol dm^-3 CuCl₂, 1.0×10^-2 mol dm^-3 InCl₃, 5.0×10^-4 mol dm^-3 TeO₂ and 0.1 mol dm^-3 HCl, a polycrystalline CuInTe₂ film was not obtained. Increasing the temperature from 303 to 363 K allowed the deposition at lower overpotential of a polycrystalline CuInTe₂ film with closely stoichiometric composition and increased indium content. The band gap of the polycrystalline CuInTe₂ film electrodeposited at 363 K at -660 mV was 0.98 eV.

Original language	English
Pages (from-to)	159-160
Number of pages	2
Journal	Surface and Coatings Technology
Volume	182
Issue number	2-3
DOIs	https://doi.org/10.1016/j.surfcoat.2003.07.004
Publication status	Published - 2004 Apr 22

Keywords

Copper-indium-telluride
Deposition process
Electrochemistry

ASJC Scopus subject areas

Surfaces, Coatings and Films
Condensed Matter Physics
Surfaces and Interfaces

Access to Document

10.1016/j.surfcoat.2003.07.004

Cite this

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title = "Electrodeposition of CuInTe2 film from an acidic solution",

abstract = "Copper-indium-telluride films were electrochemically deposited from solutions containing CuCl2, InCl3, TeO2 and HCl. Although a flat and smooth film with closely stoichiometric composition was deposited at -660 mV vs. Ag/AgCl at 303 K from a solution of 2.5×10-4 mol dm-3 CuCl2, 1.0×10-2 mol dm-3 InCl3, 5.0×10-4 mol dm-3 TeO2 and 0.1 mol dm-3 HCl, a polycrystalline CuInTe2 film was not obtained. Increasing the temperature from 303 to 363 K allowed the deposition at lower overpotential of a polycrystalline CuInTe2 film with closely stoichiometric composition and increased indium content. The band gap of the polycrystalline CuInTe2 film electrodeposited at 363 K at -660 mV was 0.98 eV.",

keywords = "Copper-indium-telluride, Deposition process, Electrochemistry",

author = "T. Ishizaki and N. Saito and A. Fuwa",

year = "2004",

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doi = "10.1016/j.surfcoat.2003.07.004",

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journal = "Surface and Coatings Technology",

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TY - JOUR

T1 - Electrodeposition of CuInTe2 film from an acidic solution

AU - Ishizaki, T.

AU - Saito, N.

AU - Fuwa, A.

PY - 2004/4/22

Y1 - 2004/4/22

N2 - Copper-indium-telluride films were electrochemically deposited from solutions containing CuCl2, InCl3, TeO2 and HCl. Although a flat and smooth film with closely stoichiometric composition was deposited at -660 mV vs. Ag/AgCl at 303 K from a solution of 2.5×10-4 mol dm-3 CuCl2, 1.0×10-2 mol dm-3 InCl3, 5.0×10-4 mol dm-3 TeO2 and 0.1 mol dm-3 HCl, a polycrystalline CuInTe2 film was not obtained. Increasing the temperature from 303 to 363 K allowed the deposition at lower overpotential of a polycrystalline CuInTe2 film with closely stoichiometric composition and increased indium content. The band gap of the polycrystalline CuInTe2 film electrodeposited at 363 K at -660 mV was 0.98 eV.

AB - Copper-indium-telluride films were electrochemically deposited from solutions containing CuCl2, InCl3, TeO2 and HCl. Although a flat and smooth film with closely stoichiometric composition was deposited at -660 mV vs. Ag/AgCl at 303 K from a solution of 2.5×10-4 mol dm-3 CuCl2, 1.0×10-2 mol dm-3 InCl3, 5.0×10-4 mol dm-3 TeO2 and 0.1 mol dm-3 HCl, a polycrystalline CuInTe2 film was not obtained. Increasing the temperature from 303 to 363 K allowed the deposition at lower overpotential of a polycrystalline CuInTe2 film with closely stoichiometric composition and increased indium content. The band gap of the polycrystalline CuInTe2 film electrodeposited at 363 K at -660 mV was 0.98 eV.

KW - Copper-indium-telluride

KW - Deposition process

KW - Electrochemistry

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