Electroluminescence in silicon oxynitride

Hiromitsu Kato*, Akira Masuzawa, Hidefumi Sato, Yoshimichi Ohki, Makoto Fujimaki, Kwang Soo Seol, Takashi Noma

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)


The mechanism of electroluminescence (EL) in silicon oxynitride (SiOxNy) was investigated. The samples tested were SiOxNy films grown by plasma enhanced chemical vapor deposition. The EL can be observed only in the sample with a high nitrogen content and thermally annealed at a high temperature. The EL peak energy decreases from 2.1 eV to 1.7 eV as the nitrogen content increases. It is already known from photoluminescence study that the present samples have at least partially a mixture structure of Si3N4 and SiO2 which are respectively responsible for the two photoluminescence bands at 2.6-2.9 and 2.7 eV in the samples. The conduction in the electric field region where the EL is observable is considered to be governed by the Poole-Frenkel process. From these results, it is concluded that the EL is caused by radiative recombination of electrons and holes in the Si3N4 region.

Original languageEnglish
Number of pages5
Publication statusPublished - 2000 Dec 1
Event6th Interantional Conference on Properties and Applications of Dielectric Materials - Xi'an, China
Duration: 2000 Jun 212000 Jun 26


Other6th Interantional Conference on Properties and Applications of Dielectric Materials
CityXi'an, China

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry


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