Electroluminescence in silicon oxynitride

Hiromitsu Kato; Akira Masuzawa; Hidefumi Sato; Yoshimichi Ohki; Makoto Fujimaki; Kwang Soo Seol; Takashi Noma

Electroluminescence in silicon oxynitride

Hiromitsu Kato^*, Akira Masuzawa, Hidefumi Sato, Yoshimichi Ohki, Makoto Fujimaki, Kwang Soo Seol, Takashi Noma

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

The mechanism of electroluminescence (EL) in silicon oxynitride (SiO_xN_y) was investigated. The samples tested were SiO_xN_y films grown by plasma enhanced chemical vapor deposition. The EL can be observed only in the sample with a high nitrogen content and thermally annealed at a high temperature. The EL peak energy decreases from 2.1 eV to 1.7 eV as the nitrogen content increases. It is already known from photoluminescence study that the present samples have at least partially a mixture structure of Si₃N₄ and SiO₂ which are respectively responsible for the two photoluminescence bands at 2.6-2.9 and 2.7 eV in the samples. The conduction in the electric field region where the EL is observable is considered to be governed by the Poole-Frenkel process. From these results, it is concluded that the EL is caused by radiative recombination of electrons and holes in the Si₃N₄ region.

Original language	English
Pages	402-406
Number of pages	5
Publication status	Published - 2000 Dec 1
Event	6th Interantional Conference on Properties and Applications of Dielectric Materials - Xi'an, China Duration: 2000 Jun 21 → 2000 Jun 26

Other

Other	6th Interantional Conference on Properties and Applications of Dielectric Materials
City	Xi'an, China
Period	00/6/21 → 00/6/26

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry

Cite this

@conference{88e1025a0a654fd18073e157d5841892,

title = "Electroluminescence in silicon oxynitride",

abstract = "The mechanism of electroluminescence (EL) in silicon oxynitride (SiOxNy) was investigated. The samples tested were SiOxNy films grown by plasma enhanced chemical vapor deposition. The EL can be observed only in the sample with a high nitrogen content and thermally annealed at a high temperature. The EL peak energy decreases from 2.1 eV to 1.7 eV as the nitrogen content increases. It is already known from photoluminescence study that the present samples have at least partially a mixture structure of Si3N4 and SiO2 which are respectively responsible for the two photoluminescence bands at 2.6-2.9 and 2.7 eV in the samples. The conduction in the electric field region where the EL is observable is considered to be governed by the Poole-Frenkel process. From these results, it is concluded that the EL is caused by radiative recombination of electrons and holes in the Si3N4 region.",

author = "Hiromitsu Kato and Akira Masuzawa and Hidefumi Sato and Yoshimichi Ohki and Makoto Fujimaki and Seol, {Kwang Soo} and Takashi Noma",

year = "2000",

month = dec,

day = "1",

language = "English",

pages = "402--406",

note = "6th Interantional Conference on Properties and Applications of Dielectric Materials ; Conference date: 21-06-2000 Through 26-06-2000",

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TY - CONF

T1 - Electroluminescence in silicon oxynitride

AU - Kato, Hiromitsu

AU - Masuzawa, Akira

AU - Sato, Hidefumi

AU - Ohki, Yoshimichi

AU - Fujimaki, Makoto

AU - Seol, Kwang Soo

AU - Noma, Takashi

PY - 2000/12/1

Y1 - 2000/12/1

N2 - The mechanism of electroluminescence (EL) in silicon oxynitride (SiOxNy) was investigated. The samples tested were SiOxNy films grown by plasma enhanced chemical vapor deposition. The EL can be observed only in the sample with a high nitrogen content and thermally annealed at a high temperature. The EL peak energy decreases from 2.1 eV to 1.7 eV as the nitrogen content increases. It is already known from photoluminescence study that the present samples have at least partially a mixture structure of Si3N4 and SiO2 which are respectively responsible for the two photoluminescence bands at 2.6-2.9 and 2.7 eV in the samples. The conduction in the electric field region where the EL is observable is considered to be governed by the Poole-Frenkel process. From these results, it is concluded that the EL is caused by radiative recombination of electrons and holes in the Si3N4 region.

AB - The mechanism of electroluminescence (EL) in silicon oxynitride (SiOxNy) was investigated. The samples tested were SiOxNy films grown by plasma enhanced chemical vapor deposition. The EL can be observed only in the sample with a high nitrogen content and thermally annealed at a high temperature. The EL peak energy decreases from 2.1 eV to 1.7 eV as the nitrogen content increases. It is already known from photoluminescence study that the present samples have at least partially a mixture structure of Si3N4 and SiO2 which are respectively responsible for the two photoluminescence bands at 2.6-2.9 and 2.7 eV in the samples. The conduction in the electric field region where the EL is observable is considered to be governed by the Poole-Frenkel process. From these results, it is concluded that the EL is caused by radiative recombination of electrons and holes in the Si3N4 region.

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M3 - Paper

AN - SCOPUS:0034516723

SP - 402

EP - 406

T2 - 6th Interantional Conference on Properties and Applications of Dielectric Materials

Y2 - 21 June 2000 through 26 June 2000

ER -

Electroluminescence in silicon oxynitride

Abstract

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