Electromigration of metallic islands on the Si(001) surface

T. Ichinokawa; H. Izumi; C. Haginoya; H. Itoh

doi:10.1103/PhysRevB.47.9654

Electromigration of metallic islands on the Si(001) surface

T. Ichinokawa^*, H. Izumi, C. Haginoya, H. Itoh

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

The electromigration of metallic islands formed by vapor deposition on a Si(001)2×1 surface has been investigated with an ultrahigh-vacuum scanning electron microscope by heating the Si substrate at temperatures higher than the melting points of the islands while passing a direct current through the Si substrate. The direction of the island migration depends on the type of metal. The speed is approximately proportional to the island radius and decreases exponentially with inverse temperature. The activation energy for the migration of Au islands is 0.75 eV. The driving force of the island migration is discussed.

Original language	English
Pages (from-to)	9654-9657
Number of pages	4
Journal	Physical Review B
Volume	47
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.47.9654
Publication status	Published - 1993

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.47.9654

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title = "Electromigration of metallic islands on the Si(001) surface",

abstract = "The electromigration of metallic islands formed by vapor deposition on a Si(001)2×1 surface has been investigated with an ultrahigh-vacuum scanning electron microscope by heating the Si substrate at temperatures higher than the melting points of the islands while passing a direct current through the Si substrate. The direction of the island migration depends on the type of metal. The speed is approximately proportional to the island radius and decreases exponentially with inverse temperature. The activation energy for the migration of Au islands is 0.75 eV. The driving force of the island migration is discussed.",

author = "T. Ichinokawa and H. Izumi and C. Haginoya and H. Itoh",

year = "1993",

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journal = "Physical Review B",

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T1 - Electromigration of metallic islands on the Si(001) surface

AU - Ichinokawa, T.

AU - Izumi, H.

AU - Haginoya, C.

AU - Itoh, H.

PY - 1993

Y1 - 1993

N2 - The electromigration of metallic islands formed by vapor deposition on a Si(001)2×1 surface has been investigated with an ultrahigh-vacuum scanning electron microscope by heating the Si substrate at temperatures higher than the melting points of the islands while passing a direct current through the Si substrate. The direction of the island migration depends on the type of metal. The speed is approximately proportional to the island radius and decreases exponentially with inverse temperature. The activation energy for the migration of Au islands is 0.75 eV. The driving force of the island migration is discussed.

AB - The electromigration of metallic islands formed by vapor deposition on a Si(001)2×1 surface has been investigated with an ultrahigh-vacuum scanning electron microscope by heating the Si substrate at temperatures higher than the melting points of the islands while passing a direct current through the Si substrate. The direction of the island migration depends on the type of metal. The speed is approximately proportional to the island radius and decreases exponentially with inverse temperature. The activation energy for the migration of Au islands is 0.75 eV. The driving force of the island migration is discussed.

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DO - 10.1103/PhysRevB.47.9654

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JO - Physical Review B

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IS - 15

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Electromigration of metallic islands on the Si(001) surface

Abstract

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