Electron affinity and surface re-ordering of homoepitaxial diamond (100)

Ka Wai Wong*, Shuit Tong Lee, Raymund Wai Man Kwok, Yat Wah Lam, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


The change in electron affinity and the re-ordering of the diamond surface upon annealing of a homoepitaxially grown diamond (100) thin film were investigated by ultraviolet photoemission spectroscopy low energy electron diffraction (LEED), and Auger electron spectroscopy. When the sample was heated to ∼ 1250°C, the electron affinity of the sample changed from negative to positive and the LEED pattern changed from (2 × 1/1 × 2) to (1 × 1) When the sample was further annealed at ∼ 900°C, the electron affinity and the LEED pattern reverted to negative and (2 × 1/1 × 2) respectively. The sample was then heated to ∼ 1100°C, followed by annealed at ∼ 900°C again, and the same phenomenon was observed. These observations were considered to be associated with the disordering/re-ordering behavior of the diamond surface upon annealing.

Original languageEnglish
Pages (from-to)5444-5447
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number10
Publication statusPublished - 1996


  • Annealing
  • Electron affinity
  • Homoepitaxial diamond
  • Surface ordering/re-ordering

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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