Electron conduction in GaAs atomic layer doped with Si

Toshiki Makimoto; Naoki Kobayashi; Yoshiji Horikoshi

doi:10.1063/1.340449

Electron conduction in GaAs atomic layer doped with Si

Toshiki Makimoto^*, Naoki Kobayashi, Yoshiji Horikoshi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

This paper describes electronic transport characteristics of Si atomic-layer-doped GaAs grown by flowrate modulation epitaxy. This enables achievement of extremely heavy Si doping within one atomic layer without interupting growth. Electron concentrations are evaluated using Hall measurements and the phenomenon of electron concentration dependence on temperature and undoped GaAs layer thickness is explained by considering parallel conduction of electrons distributed in different levels with different mobilities.

Original language	English
Pages (from-to)	5023-5026
Number of pages	4
Journal	Journal of Applied Physics
Volume	63
Issue number	10
DOIs	https://doi.org/10.1063/1.340449
Publication status	Published - 1988
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.340449

Cite this

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title = "Electron conduction in GaAs atomic layer doped with Si",

abstract = "This paper describes electronic transport characteristics of Si atomic-layer-doped GaAs grown by flowrate modulation epitaxy. This enables achievement of extremely heavy Si doping within one atomic layer without interupting growth. Electron concentrations are evaluated using Hall measurements and the phenomenon of electron concentration dependence on temperature and undoped GaAs layer thickness is explained by considering parallel conduction of electrons distributed in different levels with different mobilities.",

author = "Toshiki Makimoto and Naoki Kobayashi and Yoshiji Horikoshi",

year = "1988",

doi = "10.1063/1.340449",

language = "English",

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pages = "5023--5026",

journal = "Journal of Applied Physics",

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T1 - Electron conduction in GaAs atomic layer doped with Si

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

AU - Horikoshi, Yoshiji

PY - 1988

Y1 - 1988

N2 - This paper describes electronic transport characteristics of Si atomic-layer-doped GaAs grown by flowrate modulation epitaxy. This enables achievement of extremely heavy Si doping within one atomic layer without interupting growth. Electron concentrations are evaluated using Hall measurements and the phenomenon of electron concentration dependence on temperature and undoped GaAs layer thickness is explained by considering parallel conduction of electrons distributed in different levels with different mobilities.

AB - This paper describes electronic transport characteristics of Si atomic-layer-doped GaAs grown by flowrate modulation epitaxy. This enables achievement of extremely heavy Si doping within one atomic layer without interupting growth. Electron concentrations are evaluated using Hall measurements and the phenomenon of electron concentration dependence on temperature and undoped GaAs layer thickness is explained by considering parallel conduction of electrons distributed in different levels with different mobilities.

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U2 - 10.1063/1.340449

DO - 10.1063/1.340449

M3 - Article

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SP - 5023

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Electron conduction in GaAs atomic layer doped with Si

Abstract

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