Electron conduction in GaAs atomic layer doped with Si

Toshiki Makimoto*, Naoki Kobayashi, Yoshiji Horikoshi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


This paper describes electronic transport characteristics of Si atomic-layer-doped GaAs grown by flowrate modulation epitaxy. This enables achievement of extremely heavy Si doping within one atomic layer without interupting growth. Electron concentrations are evaluated using Hall measurements and the phenomenon of electron concentration dependence on temperature and undoped GaAs layer thickness is explained by considering parallel conduction of electrons distributed in different levels with different mobilities.

Original languageEnglish
Pages (from-to)5023-5026
Number of pages4
JournalJournal of Applied Physics
Issue number10
Publication statusPublished - 1988
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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