Electron microscope studies of InxGav1-xAs/GaAs/Si grown by metalorganic chemical vapor deposition

K. Kamei; W. M. Stobbs; K. Fujita

doi:10.1007/BF02653026

Electron microscope studies of In_xGav_1-xAs/GaAs/Si grown by metalorganic chemical vapor deposition

K. Kamei^*, W. M. Stobbs, K. Fujita

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The microstructure of In_xGa_1-xAs/GaAs (5 nm/5 nm, x < 0 to 1.0), as grown by a metalorganic chemical vapor deposition two-step growth technique on Si(100) at 450‡C, and subsequently annealed at 750‡C, is investigated using plan-view and cross-sectional transmission electron microscopy. The variations in resultant island morphology and strain as a function of the In content were examined through the comparison of the misfit dislocation arrays and moirés observed. The results are discussed in relation to the ways in which the island relaxation process changes for high In content.

Original language	English
Pages (from-to)	2025-2031
Number of pages	7
Journal	Journal of Electronic Materials
Volume	24
Issue number	12
DOIs	https://doi.org/10.1007/BF02653026
Publication status	Published - 1995 Dec
Externally published	Yes

Keywords

GaAs/Si heteroepitaxy
InGaAs
metalorganic chemical vapor deposition (MOCVD)
transmission electron microscopy (TEM)

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)
Electronic, Optical and Magnetic Materials
Materials Science(all)
Electrical and Electronic Engineering

Access to Document

10.1007/BF02653026

Cite this

@article{e742602b55fc41a7a3a3d6f14534df5a,

title = "Electron microscope studies of InxGav1-xAs/GaAs/Si grown by metalorganic chemical vapor deposition",

abstract = "The microstructure of InxGa1-xAs/GaAs (5 nm/5 nm, x < 0 to 1.0), as grown by a metalorganic chemical vapor deposition two-step growth technique on Si(100) at 450‡C, and subsequently annealed at 750‡C, is investigated using plan-view and cross-sectional transmission electron microscopy. The variations in resultant island morphology and strain as a function of the In content were examined through the comparison of the misfit dislocation arrays and moir{\'e}s observed. The results are discussed in relation to the ways in which the island relaxation process changes for high In content.",

keywords = "GaAs/Si heteroepitaxy, InGaAs, metalorganic chemical vapor deposition (MOCVD), transmission electron microscopy (TEM)",

author = "K. Kamei and Stobbs, {W. M.} and K. Fujita",

year = "1995",

month = dec,

doi = "10.1007/BF02653026",

language = "English",

volume = "24",

pages = "2025--2031",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "12",

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TY - JOUR

T1 - Electron microscope studies of InxGav1-xAs/GaAs/Si grown by metalorganic chemical vapor deposition

AU - Kamei, K.

AU - Stobbs, W. M.

AU - Fujita, K.

PY - 1995/12

Y1 - 1995/12

N2 - The microstructure of InxGa1-xAs/GaAs (5 nm/5 nm, x < 0 to 1.0), as grown by a metalorganic chemical vapor deposition two-step growth technique on Si(100) at 450‡C, and subsequently annealed at 750‡C, is investigated using plan-view and cross-sectional transmission electron microscopy. The variations in resultant island morphology and strain as a function of the In content were examined through the comparison of the misfit dislocation arrays and moirés observed. The results are discussed in relation to the ways in which the island relaxation process changes for high In content.

AB - The microstructure of InxGa1-xAs/GaAs (5 nm/5 nm, x < 0 to 1.0), as grown by a metalorganic chemical vapor deposition two-step growth technique on Si(100) at 450‡C, and subsequently annealed at 750‡C, is investigated using plan-view and cross-sectional transmission electron microscopy. The variations in resultant island morphology and strain as a function of the In content were examined through the comparison of the misfit dislocation arrays and moirés observed. The results are discussed in relation to the ways in which the island relaxation process changes for high In content.

KW - GaAs/Si heteroepitaxy

KW - InGaAs

KW - metalorganic chemical vapor deposition (MOCVD)

KW - transmission electron microscopy (TEM)

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