Electron-phonon scattering effect on strained si nanowire FETs at low temperature

I. Tsuchida; A. Seike; H. Takai; J. Masuda; D. Kosemura; A. Ogura; T. Watanabe; I. Ohdomari

doi:10.1149/1.3206643

Electron-phonon scattering effect on strained si nanowire FETs at low temperature

I. Tsuchida^*, A. Seike, H. Takai, J. Masuda, D. Kosemura, A. Ogura, T. Watanabe, I. Ohdomari

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Strained Si nanowire FETs of nanowire width (W) of W=155nm and W=5000nm, are evaluated by I_d-V_bg characteristics at various temperatures. Transconductance (g_m) and subthreshold slope are obtained from the I_d-V_bg characteristics. The normalized g_m (g_m ^*) increases by a factor of 1.38 for W=155nm and 3.13 for W=5000nm. Subthreshold slope decreases 22% for W=5000nm and 42% for W=155nm. This improvement is due to suppression of electron-phonon scattering at low temperature. This also indicates that the influence of electron-phonon interaction on g_m enhancement is different compared to that in bulk Si.

Original language	English
Title of host publication	ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
Publisher	Electrochemical Society Inc.
Pages	439-443
Number of pages	5
Edition	6
ISBN (Electronic)	9781607680932
ISBN (Print)	9781566777438
DOIs	https://doi.org/10.1149/1.3206643
Publication status	Published - 2009
Event	7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria Duration: 2009 Oct 5 → 2009 Oct 7

Publication series

Name	ECS Transactions
Number	6
Volume	25
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
Country/Territory	Austria
City	Vienna
Period	09/10/5 → 09/10/7

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.3206643

Cite this

Tsuchida, I., Seike, A., Takai, H., Masuda, J., Kosemura, D., Ogura, A., Watanabe, T., & Ohdomari, I. (2009). Electron-phonon scattering effect on strained si nanowire FETs at low temperature. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7 (6 ed., pp. 439-443). (ECS Transactions; Vol. 25, No. 6). Electrochemical Society Inc.. https://doi.org/10.1149/1.3206643

Electron-phonon scattering effect on strained si nanowire FETs at low temperature. / Tsuchida, I.; Seike, A.; Takai, H. et al.
ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6. ed. Electrochemical Society Inc., 2009. p. 439-443 (ECS Transactions; Vol. 25, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tsuchida, I, Seike, A, Takai, H, Masuda, J, Kosemura, D, Ogura, A, Watanabe, T & Ohdomari, I 2009, Electron-phonon scattering effect on strained si nanowire FETs at low temperature. in ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6 edn, ECS Transactions, no. 6, vol. 25, Electrochemical Society Inc., pp. 439-443, 7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society, Vienna, Austria, 09/10/5. https://doi.org/10.1149/1.3206643

@inproceedings{4a57608d2c9c4281a0260daa8e004e4e,

title = "Electron-phonon scattering effect on strained si nanowire FETs at low temperature",

abstract = "Strained Si nanowire FETs of nanowire width (W) of W=155nm and W=5000nm, are evaluated by Id-Vbg characteristics at various temperatures. Transconductance (gm) and subthreshold slope are obtained from the Id-Vbg characteristics. The normalized gm (gm *) increases by a factor of 1.38 for W=155nm and 3.13 for W=5000nm. Subthreshold slope decreases 22% for W=5000nm and 42% for W=155nm. This improvement is due to suppression of electron-phonon scattering at low temperature. This also indicates that the influence of electron-phonon interaction on gm enhancement is different compared to that in bulk Si.",

author = "I. Tsuchida and A. Seike and H. Takai and J. Masuda and D. Kosemura and A. Ogura and T. Watanabe and I. Ohdomari",

year = "2009",

doi = "10.1149/1.3206643",

language = "English",

isbn = "9781566777438",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "6",

pages = "439--443",

booktitle = "ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7",

edition = "6",

note = "7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society ; Conference date: 05-10-2009 Through 07-10-2009",

}

TY - GEN

T1 - Electron-phonon scattering effect on strained si nanowire FETs at low temperature

AU - Tsuchida, I.

AU - Seike, A.

AU - Takai, H.

AU - Masuda, J.

AU - Kosemura, D.

AU - Ogura, A.

AU - Watanabe, T.

AU - Ohdomari, I.

PY - 2009

Y1 - 2009

N2 - Strained Si nanowire FETs of nanowire width (W) of W=155nm and W=5000nm, are evaluated by Id-Vbg characteristics at various temperatures. Transconductance (gm) and subthreshold slope are obtained from the Id-Vbg characteristics. The normalized gm (gm *) increases by a factor of 1.38 for W=155nm and 3.13 for W=5000nm. Subthreshold slope decreases 22% for W=5000nm and 42% for W=155nm. This improvement is due to suppression of electron-phonon scattering at low temperature. This also indicates that the influence of electron-phonon interaction on gm enhancement is different compared to that in bulk Si.

AB - Strained Si nanowire FETs of nanowire width (W) of W=155nm and W=5000nm, are evaluated by Id-Vbg characteristics at various temperatures. Transconductance (gm) and subthreshold slope are obtained from the Id-Vbg characteristics. The normalized gm (gm *) increases by a factor of 1.38 for W=155nm and 3.13 for W=5000nm. Subthreshold slope decreases 22% for W=5000nm and 42% for W=155nm. This improvement is due to suppression of electron-phonon scattering at low temperature. This also indicates that the influence of electron-phonon interaction on gm enhancement is different compared to that in bulk Si.

UR - http://www.scopus.com/inward/record.url?scp=76649113144&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76649113144&partnerID=8YFLogxK

U2 - 10.1149/1.3206643

DO - 10.1149/1.3206643

M3 - Conference contribution

AN - SCOPUS:76649113144

SN - 9781566777438

T3 - ECS Transactions

SP - 439

EP - 443

BT - ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7

PB - Electrochemical Society Inc.

T2 - 7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society

Y2 - 5 October 2009 through 7 October 2009

ER -

Electron-phonon scattering effect on strained si nanowire FETs at low temperature

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