Electron spin relaxation dynamics in InGaAs/InP multiple-quantum wells

Atsushi Tackeuchi*, Osamu Wada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


The electron spin relaxation of InGaAs/InP multiple-quantum wells is investigated at room temperature using time-resolved polarization-dependent absorption measurements. The spin relaxation time is dependent on the quantum confined energy, E1e, according to τs ∝ E1e-1. The dependence differs from that of the D'yakonov-Perel' interaction, which governs the spin relaxation of GaAs quantum wells at room temperature, and suggests the possibility of the existence of an additional spin relaxation mechanism.

Original languageEnglish
Pages (from-to)98-99
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number1
Publication statusPublished - 1998 Jan


  • D'yakonov-Perel'
  • Electron
  • Elliott-Yafet
  • InGaAs
  • MQW
  • Spin relaxation

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


Dive into the research topics of 'Electron spin relaxation dynamics in InGaAs/InP multiple-quantum wells'. Together they form a unique fingerprint.

Cite this