Electron spin relaxation in GaAs/AlGaAs quantum wires analyzed by transient photoluminescence

Tetsuya Nishimura*, Xue Lun Wang, Mutsuo Ogura, Atsushi Tackeuchi, Osamu Wada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


We report on the spin relaxation in GaAs-based quantum wires and wells studied at 50 K < T < 180 K by analyzing the circularly polarized photoluminescence transients. A 3.5-times shortening of the electron spin relaxation time is observed in GaAs/AlGaAs quantum wires compared with that in quantum wells at 180 K. The observed results suggest that a spin flip in the quantum wires is caused predominantly by the D'yakonov-Perel' effect due to spin-orbit interaction. The strong quantum confinement of electrons in the reduced dimensionality of the quantum structure leads to a larger spin splitting energy and a stronger temperature dependence of spin relaxation.

Original languageEnglish
Pages (from-to)L941-L944
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number8 B
Publication statusPublished - 1999 Aug
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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