TY - JOUR
T1 - Electron spin relaxation in GaAs/AlGaAs quantum wires analyzed by transient photoluminescence
AU - Nishimura, Tetsuya
AU - Wang, Xue Lun
AU - Ogura, Mutsuo
AU - Tackeuchi, Atsushi
AU - Wada, Osamu
PY - 1999/8
Y1 - 1999/8
N2 - We report on the spin relaxation in GaAs-based quantum wires and wells studied at 50 K < T < 180 K by analyzing the circularly polarized photoluminescence transients. A 3.5-times shortening of the electron spin relaxation time is observed in GaAs/AlGaAs quantum wires compared with that in quantum wells at 180 K. The observed results suggest that a spin flip in the quantum wires is caused predominantly by the D'yakonov-Perel' effect due to spin-orbit interaction. The strong quantum confinement of electrons in the reduced dimensionality of the quantum structure leads to a larger spin splitting energy and a stronger temperature dependence of spin relaxation.
AB - We report on the spin relaxation in GaAs-based quantum wires and wells studied at 50 K < T < 180 K by analyzing the circularly polarized photoluminescence transients. A 3.5-times shortening of the electron spin relaxation time is observed in GaAs/AlGaAs quantum wires compared with that in quantum wells at 180 K. The observed results suggest that a spin flip in the quantum wires is caused predominantly by the D'yakonov-Perel' effect due to spin-orbit interaction. The strong quantum confinement of electrons in the reduced dimensionality of the quantum structure leads to a larger spin splitting energy and a stronger temperature dependence of spin relaxation.
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U2 - 10.1143/jjap.38.l941
DO - 10.1143/jjap.38.l941
M3 - Article
AN - SCOPUS:0033173909
SN - 0021-4922
VL - 38
SP - L941-L944
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
IS - 8 B
ER -