Electron transport properties in lightly Si-doped InGaN films grown by metalorganic vapor phase epitaxy

Chengxin Wang*, Narihiko Maeda, Kotaro Tsubaki, Naoki Kobayashi, Toshiki Makimoto

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


The electronic properties of Si-doped InGaN thin films with different In compositions were investigated. The samples were grown by metalorganic vapor phase epitaxy (MOVPE), and then evaluated using photoluminescence, X-ray diffraction and variable temperature Hall effect measurements. The Si donor activation energy was found to decrease with the increase in In composition of InGaN as a result of shrinking bandbap energy, and determined to be 17 meV, 10 meV and 6 meV for 4%, 9% and 13% of In compositions through the least square fitting of experimental carrier concentrations versus temperatures. InGaN alloy with 9% of In composition exhibited the best electronic properties with the lowest compensation ratio and the highest mobilities among those three samples over the whole range of measurement temperature. The relatively high mobility of 227 cm2/Vs at room temperature was achieved in this sample. Scattering mechanism in InGaN alloy was also studied using a simple model.

Original languageEnglish
Pages (from-to)3356-3359
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number6 A
Publication statusPublished - 2004 Jun
Externally publishedYes


  • Activation energy
  • Hall effect
  • InGaN
  • Mobility

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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