TY - JOUR
T1 - Electronic properties for the C 2v and C s isomers of Pr@C 82 studied by Raman, resistivity and scanning tunneling microscopy/spectroscopy
AU - Hosokawa, Tomoko
AU - Fujiki, Satoshi
AU - Kuwahara, Eiji
AU - Kubozono, Yoshihiro
AU - Kitagawa, Hiroshi
AU - Fujiwara, Akihiko
AU - Takenobu, Taishi
AU - Iwasa, Yoshihiro
PY - 2004/9/1
Y1 - 2004/9/1
N2 - Electronic properties of the major and minor isomers of Pr@C 82, I (C 2v) and II (C s), are studied by Raman scattering, resistivity measurement, scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The valences of the Pr atom in both isomers are determined to be +3 based on the Raman shift in the Pr-C 82 stretching mode. The transport properties showed that both isomers are normal semiconductors with a small energy gap (E g). STM of isomer I shows internal structures dependent on bias voltage V s, and STS shows that this isomer is a semiconductor with E g = 0.7 eV.
AB - Electronic properties of the major and minor isomers of Pr@C 82, I (C 2v) and II (C s), are studied by Raman scattering, resistivity measurement, scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The valences of the Pr atom in both isomers are determined to be +3 based on the Raman shift in the Pr-C 82 stretching mode. The transport properties showed that both isomers are normal semiconductors with a small energy gap (E g). STM of isomer I shows internal structures dependent on bias voltage V s, and STS shows that this isomer is a semiconductor with E g = 0.7 eV.
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U2 - 10.1016/j.cplett.2004.07.072
DO - 10.1016/j.cplett.2004.07.072
M3 - Article
AN - SCOPUS:4344698256
SN - 0009-2614
VL - 395
SP - 78
EP - 81
JO - Chemical Physics Letters
JF - Chemical Physics Letters
IS - 1-3
ER -